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FDJ1027P

FDJ1027P
Mfr. #:
FDJ1027P
Fabricante:
ON Semiconductor / Fairchild
Descripción:
MOSFET 1.8 V P-CH PowerTrench MOSFET
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
FDJ1027P Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
EN Semiconductor
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
SMD / SMT
Paquete / Caja:
SC-75-6
Número de canales:
2 Channel
Polaridad del transistor:
P-Channel
Vds - Voltaje de ruptura de drenaje-fuente:
20 V
Id - Corriente de drenaje continua:
2.8 A
Rds On - Resistencia de la fuente de drenaje:
160 mOhms
Vgs - Voltaje puerta-fuente:
8 V
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Pd - Disipación de energía:
1.5 W
Configuración:
Doble
Modo de canal:
Mejora
Embalaje:
Carrete
Altura:
0.8 mm
Longitud:
1.6 mm
Producto:
Pequeña señal MOSFET
Serie:
FDJ1027P
Tipo de transistor:
2 P-Channel
Ancho:
1.6 mm
Marca:
ON Semiconductor / Fairchild
Otoño:
13 ns
Tipo de producto:
MOSFET
Hora de levantarse:
13 ns
Cantidad de paquete de fábrica:
3000
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
13 ns
Tiempo típico de retardo de encendido:
8 ns
Parte # Alias:
FDJ1027P_NL
Unidad de peso:
0.003386 oz
Tags
FDJ1027P, FDJ1027, FDJ102, FDJ10, FDJ1, FDJ
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET P-CH 20V 2.8A 6-Pin SC-75 T/R
***ark
MOSFET; Transistor Type:MOSFET; Transistor Polarity:P Channel; Continuous Drain Current, Id:-2.8A; On Resistance, Rds(on):108mohm; Package/Case:FLMP; Power Dissipation, Pd:1.5W; Drain-Source Breakdown Voltage:-20V ;RoHS Compliant: Yes
***rchild Semiconductor
This dual P-Channel 1.8V specified MOSFET uses Fairchild's advanced low voltage PowerTrench process. Packaged in FLMP SC75, the RDS(ON) and thermal properties of the device are optimized for battery power management applications.
***nell
MOSFET P CH -20V -2.8A FLMP SC-75; Transistor Polarity: P Channel; Continuous Drain Current Id: -2.8A; Drain Source Voltage Vds: -20V; On Resistance Rds(on): 0.16ohm; Rds(on) Test Voltage Vgs: -4.5V; Threshold Voltage Vgs: -800mV; Power Dissipation Pd: 1.5W; Transistor Case Style: SC-75; No. of Pins: 6Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (15-Jan-2018); Current Id Max: -2.8A; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Termination Type: Surface Mount Device; Voltage Vds Typ: -20V; Voltage Vgs Max: -800mV; Voltage Vgs Rds on Measurement: -4.5V
***inecomponents.com
MLP6 2X1.6,-20V,-2.9A,112m ohm,DUAL, PCH POWER TRENCH MOSFET
***ark
Transistor; Transistor Polarity:P Channel; Continuous Drain Current Id:-2.9A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):93mohm; Rds(on) Test Voltage, Vgs:-4.5V; Threshold Voltage, Vgs Typ:-700mV; Power Dissipation Pd:1.4W ;RoHS Compliant: Yes
***rchild Semiconductor
This dual P-Channel MOSFET uses Fairchild's advanced low voltage PowerTrench® process. This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultra-portable applications. It features two independent P-Channel MOSFETs with low on-state resistance for minimum conduction losses. When connected in the typical common source configuration, bi-directional current flow is possible. The SC-75 MicroFET package offers exceptional thermal performance for its physical size and is well suited to linear mode applications.
***emi
N-Channel PowerTrench® MOSFET, 2.5V Specified, 1.9 A, 115 mΩ
***el Electronic
Modular Connectors - Jacks With Magnetics 1 (Unlimited) RJ45 1 Solder 90° Angle (Right) Shielded, EMI Finger Through Hole Down 10/100/1000 Base-T, AutoMDIX CONN MAGJACK 1PORT 1000 BASE-T
***rchild Semiconductor
This N-Channel MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for portable electronics applications.
***emi
P-Channel PowerTrench® MOSFET, 2.5V Specified, -1.2 A, 180 mΩ
***ment14 APAC
MOSFET, P; Transistor Polarity:P Channel; Continuous Drain Current Id:1.2A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):187mohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs Typ:900mV; Power Dissipation Pd:750mW; Transistor Case Style:SC-70; No. of Pins:6; SVHC:No SVHC (19-Dec-2011); Current Id Max:1.2A; Package / Case:SC70; Power Dissipation Pd:750mW; Termination Type:SMD; Voltage Vds Typ:20V; Voltage Vgs Max:-900mV; Voltage Vgs Rds on Measurement:8V
***rchild Semiconductor
This P-Channel MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for portable electronics applications.
***ure Electronics
Single N-Channel 20 V 0.25 Ohm 500 mW Silicon Surface Mount Mosfet - SOT-23
***ical
Trans MOSFET N-CH 20V 1.2A Automotive 3-Pin SC-59 T/R
***ser
Transistor - FET N-Channel 20V 1.2A
***des Inc SCT
N-Channel Mosfet, 20V VDS, 8±V VGS
***ark
Mosfet Bvdss: 8V~24V Sc59 T&r 3K
***(Formerly Allied Electronics)
N-Channel Enhancement Mode FET SC-59
***ment14 APAC
MOSFET, N CH, 20V, 1.2A, SC-59; Transistor Polarity:N Channel; Continuous Drain Current Id:1.2A; Drain Source Voltage Vds:20V; On Resistance Rds(on):100mohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:1.2V; Power Dissipation Pd:500mW; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SC-59; No. of Pins:3; Current Id Max:4A; Package / Case:SC-59; Power Dissipation Pd:500mW; Termination Type:SMD; Transistor Type:Enhancement; Voltage Vds Typ:20V; Voltage Vgs Max:8V; Voltage Vgs Rds on Measurement:4.5V
***(Formerly Allied Electronics)
SI1062X-T1-GE3 N-channel MOSFET Transistor; 0.53 A; 20 V; 3-Pin SC-89
***ment14 APAC
MOSFET, N-CH, 20V, 0.53A, SC-89; Transistor Polarity:N Channel; Continuous Drain Current Id:530mA; Source Voltage Vds:20V; On Resistance
***nell
MOSFET, N-CH, 20V, 0.53A, SC-89; Transistor Polarity: N Channel; Continuous Drain Current Id: 530mA; Drain Source Voltage Vds: 20V; On Resistance Rds(on): 0.35ohm; Rds(on) Test Voltage Vgs: 4.5V; Threshold Voltage Vgs: 1V; Power Dissipation Pd: 220mW; Transistor Case Style: SC-89; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: TrenchFET Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (20-Jun-2016)
***et Japan
Transistor MOSFET Array Dual N-CH 20V 0.61A 6-Pin SC-89 T/R
***ure Electronics
Dual N-Channel 20 V 0.22 W 1.2 nC Silicon Surface Mount Mosfet - SC-89-6
***ment14 APAC
MOSFET, DUAL N-CH, 20V, 0.16A, SC-89; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:610mA; Source Voltage Vds:20V; On
***nell
MOSFET, DUAL N-CH, 20V, 0.16A, SC-89; Transistor Polarity: Dual N Channel; Continuous Drain Current Id: 610mA; Drain Source Voltage Vds: 20V; On Resistance Rds(on): 0.33ohm; Rds(on) Test Voltage Vgs: 4.5V; Threshold Voltage Vgs: 1V; Power Dissipation Pd: 220mW; Transistor Case Style: SC-89; No. of Pins: 6Pins; Operating Temperature Max: 150°C; Product Range: TrenchFET Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018)
Parte # Mfg. Descripción Valores Precio
FDJ1027P
DISTI # FDJ1027P-ND		ON SemiconductorMOSFET 2P-CH 20V 2.8A SC-75
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		Limited Supply - Call
    FDJ1027P
    DISTI # 512-FDJ1027P    		ON SemiconductorMOSFET 1.8 V P-CH PowerTrench MOSFET
    RoHS: Compliant    		0
      FDJ1027PFairchild Semiconductor CorporationPower Field-Effect Transistor, 2.8A I(D), 20V, 0.16ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
      RoHS: Compliant      		283275
      • 1000:$0.2900
      • 500:$0.3100
      • 100:$0.3200
      • 25:$0.3300
      • 1:$0.3600
      FDJ1027PFairchild Semiconductor Corporation 48000
        FDJ1027PFairchild Semiconductor Corporation 6000
        • 6:$0.8625
        • 25:$0.5606
        • 91:$0.3234
        • 311:$0.2760
        • 672:$0.2415
        • 1596:$0.2243
        FDJ1027P. 27
          FDJ1027PFairchild Semiconductor Corporation 38400
          • 4580:$0.2808
          • 2138:$0.3276
          • 1:$0.9360
          FDJ1027PFreescale Semiconductor 4800
          • 2677:$0.2875
          • 581:$0.2990
          • 1:$1.1500
          FDJ1027P-GFairchild Semiconductor Corporation 3000
            FDJ1027P.
            DISTI # 1350570            		ON Semiconductor 
            RoHS: Compliant            		0
            • 1000:$0.4810
            • 500:$0.5120
            • 250:$0.6130
            • 100:$0.7260
            • 25:$1.0100
            • 1:$1.2000
            Imagen Parte # Descripción
            FDJ1032C

            Mfr.#: FDJ1032C

            OMO.#: OMO-FDJ1032C

            		 MOSFET SC75 FLMP COMPLEMENTARY POWER
            FDJ127P

            Mfr.#: FDJ127P

            OMO.#: OMO-FDJ127P

            		 MOSFET P-Ch -1.8 Vgs Spec PowerTrench
            FDJ1027P

            Mfr.#: FDJ1027P

            OMO.#: OMO-FDJ1027P

            		 MOSFET 1.8 V P-CH PowerTrench MOSFET
            FDJ1027P-G

            Mfr.#: FDJ1027P-G

            OMO.#: OMO-FDJ1027P-G-1190

            		 Nuevo y original
            FDJ1029P

            Mfr.#: FDJ1029P

            OMO.#: OMO-FDJ1029P-1190

            		 Nuevo y original
            FDJ128N-NL

            Mfr.#: FDJ128N-NL

            OMO.#: OMO-FDJ128N-NL-1190

            		 Nuevo y original
            FDJ128N/BXX

            Mfr.#: FDJ128N/BXX

            OMO.#: OMO-FDJ128N-BXX-1190

            		 Nuevo y original
            FDJ128N_F077

            Mfr.#: FDJ128N_F077

            OMO.#: OMO-FDJ128N-F077-ON-SEMICONDUCTOR

            		 MOSFET N-CH 20V 5.5A SC75-6
            FDJ128N_NL , 1N5234BRL

            Mfr.#: FDJ128N_NL , 1N5234BRL

            OMO.#: OMO-FDJ128N-NL-1N5234BRL-1190

            		 Nuevo y original
            FDJ129P-NL

            Mfr.#: FDJ129P-NL

            OMO.#: OMO-FDJ129P-NL-1190

            		 Nuevo y original
            Disponibilidad
            Valores:
            Available
            En orden:
            4500
            Ingrese la cantidad:
            El precio actual de FDJ1027P es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
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