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MSC040SMA120B

MSC040SMA120B
Mfr. #:
MSC040SMA120B
Fabricante:
Microchip / Microsemi
Descripción:
SILICON CARBIDE POWER TRANSISTORS/MODULES
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
MSC040SMA120B Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
MSC040SMA120B más información
Atributo del producto
Valor de atributo
Tags
MSC040S, MSC040, MSC04, MSC0, MSC
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH SiC 1.2KV 64A Tube
***hardson RFPD
SILICON CARBIDE MOSFETS
***i-Key
MOSFET N-CH 1200V TO247
SiC Schottky Barrier Diodes
Microsemi / Microchip SiC Schottky Barrier Diodes (SBD) offer dynamic and thermal performance over conventional Silicon power diodes. SiC (Silicon Carbide) Barrier Diodes are comprised of Silicon (Si) and Carbon (C). Compared to Silicon-only devices, SiC devices offer a much greater dielectric breakdown field strength, higher bandgap, and higher thermal conductivity. SiC Schottky Diodes feature zero forward and reverse recovery charge, which reduces diode switching losses. These devices also offer temperature-independent switching, ensuring stable high-temperature performance.
Next Generation SiC MOSFETs
Microsemi / Microchip Next Generation Silicon Carbide (SiC) MOSFETs provide good dynamic and thermal performance compared to the Silicon (Si) power MOSFETs. These MOSFETs come with low capacitances, low gate charge, fast switching speed, and good avalanche ruggedness. The SiC MOSFETs are capable of stable operation at 175°C high junction temperature. These MOSFETs provide high-efficiency with low switching losses. The SiC MOSFETs does not require any freewheeling diodes and reduces the system cost. Typical applications include smart grid transmission and distribution, induction heating and welding, and power supply as well as distribution.
Parte # Mfg. Descripción Valores Precio
MSC040SMA120B
DISTI # V36:1790_21374926		Microsemi CorporationSILICON CARBIDE POWER TRANSISTORS/MODULES0
    MSC040SMA120B
    DISTI # MSC040SMA120B-ND    		Microsemi CorporationMOSFET N-CH 1200V TO247
    RoHS: Compliant
    Min Qty: 1
    Container: Tube    		On Order
    • 120:$24.5769
    • 30:$26.4437
    • 10:$28.7770
    • 1:$31.1100
    MSC040SMA120B
    DISTI # MSC040SMA120B    		Microchip Technology IncSilicon Carbide Power MOSFET N-Channel 1200V 67A 3-Pin TO-247 - Rail/Tube (Alt: MSC040SMA120B)
    RoHS: Compliant
    Min Qty: 90
    Container: Tube    		Americas - 0
    • 900:$19.2900
    • 450:$19.5900
    • 270:$20.1900
    • 180:$20.8900
    • 90:$21.5900
    MSC040SMA120B
    DISTI # 494-MSC040SMA120B    		Microchip Technology IncMOSFET
    RoHS: Compliant    		0
    • 1:$36.3400
    • 5:$35.3900
    • 10:$33.9800
    • 25:$32.7900
    • 50:$31.1100
    • 100:$29.2000
    • 250:$27.2800
    Imagen Parte # Descripción
    MSC040SMA120B

    Mfr.#: MSC040SMA120B

    OMO.#: OMO-MSC040SMA120B

    		 MOSFET UNRLS, FG, SIC MOSFET, TO-247
    MSC040SMA120J

    Mfr.#: MSC040SMA120J

    OMO.#: OMO-MSC040SMA120J

    		 MOSFET UNRLS, FG, SIC MOSFET, SOT-227
    MSC040SMA120S

    Mfr.#: MSC040SMA120S

    OMO.#: OMO-MSC040SMA120S

    		 MOSFET UNRLS, FG, SIC MOSFET, TO-268
    MSC040SMA120S

    Mfr.#: MSC040SMA120S

    OMO.#: OMO-MSC040SMA120S-1190

    		 Transistor MOSFET N-CH 1200V 65A 3-Pin D3PAK Tube (Alt: MSC040SMA120S)
    MSC04020D2942BE100

    Mfr.#: MSC04020D2942BE100

    OMO.#: OMO-MSC04020D2942BE100-1190

    		 Nuevo y original
    MSC040SMA120B

    Mfr.#: MSC040SMA120B

    OMO.#: OMO-MSC040SMA120B-1190

    		 SILICON CARBIDE POWER TRANSISTORS/MODULES
    Disponibilidad
    Valores:
    Available
    En orden:
    3500
    Ingrese la cantidad:
    El precio actual de MSC040SMA120B es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
    Precio de referencia (USD)
    Cantidad
    Precio unitario
    Ext. Precio
    1
    28,94 US$
    28,94 US$
    10
    27,49 US$
    274,88 US$
    100
    26,04 US$
    2 604,15 US$
    500
    24,59 US$
    12 297,40 US$
    1000
    23,15 US$
    23 148,00 US$
    Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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