BUK9507-30B,127

BUK9507-30B,127
Mfr. #:
BUK9507-30B,127
Fabricante:
Nexperia
Descripción:
RF Bipolar Transistors MOSFET HIGH PERF TRENCHMOS
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
BUK9507-30B,127 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
BUK9507-30B,127 DatasheetBUK9507-30B,127 Datasheet (P4-P6)BUK9507-30B,127 Datasheet (P7-P9)BUK9507-30B,127 Datasheet (P10-P12)BUK9507-30B,127 Datasheet (P13-P15)
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante
NXP
categoria de producto
FET - Single
RoHS
Detalles
Marca
Semiconductores NXP
Estilo de montaje
A través del orificio
Paquete / Estuche
TO-220-3
número de canales
1 Channel
Polaridad del transistor
Canal N
Vds - Voltaje de ruptura de drenaje-fuente
30 V
Id - Corriente de drenaje continua
108 A
Rds On - Resistencia de la fuente de drenaje
5 mOhms
Vgs - Voltaje puerta-fuente
15 V
Temperatura máxima de funcionamiento
+ 175 C
Tecnología
Si
embalaje
Tubo
Modo de canal
Mejora
Configuración
Único
Otoño
98 ns
Temperatura mínima de funcionamiento
- 55 C
Pd - Disipación de energía
157 W
Hora de levantarse
135 ns
Tipo de transistor
1 N-Channel
Tiempo de retardo de apagado típico
99 ns
Tiempo de retardo de encendido típico
30 ns
Parte # Alias
BUK9507-30B
Unidad de peso
0.211644 oz
Tags
BUK9507, BUK950, BUK95, BUK9, BUK
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ark
Trans MOSFET N-CH 30V 108A Automotive 3-Pin(3+Tab) TO-220AB Tube
***peria
N-channel TrenchMOS logic level FET
***or
PFET, 75A I(D), 30V, 0.009OHM, 1
***(Formerly Allied Electronics)
IRL3803VPBF N-channel MOSFET Transistor, 140 A, 30 V, 3-Pin TO-220
***ure Electronics
Single N-Channel 30 V 5.5 mOhm 76 nC HEXFET® Power Mosfet - TO-220-3
***ineon SCT
30V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS
***ineon
Benefits: RoHS Compliant; Industry-leading quality; Fully Avalanche Rated; Logic Level
***ow.cn
Trans MOSFET N-CH Si 30V 140A 3-Pin(3+Tab) TO-220AB Tube
***ment14 APAC
MOSFET, N, LOGIC, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:140A; Drain Source Voltage Vds:30V; On Resistance Rds(on):5.5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1V; Power Dissipation Pd:200W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:140A; Package / Case:TO-220AB; Power Dissipation Pd:200W; Power Dissipation Pd:200W; Pulse Current Idm:470A; SMD Marking:IRL3803VPBF; Termination Type:Through Hole; Voltage Vds Typ:30V; Voltage Vgs Max:1V; Voltage Vgs Rds on Measurement:10V
***(Formerly Allied Electronics)
MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 0.006Ohm;ID 140A;TO-220AB;PD 200W;VGS +/-16V
*** Source Electronics
Trans MOSFET N-CH Si 30V 140A 3-Pin(3+Tab) TO-220AB Tube / MOSFET N-CH 30V 140A TO-220AB
***ure Electronics
Single N-Channel 30 V 0.006 Ohm 140 nC HEXFET® Power Mosfet - TO-220-3
***ment14 APAC
MOSFET, N, 30V, 120A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:120A; Drain Source Voltage Vds:30V; On Resistance Rds(on):6mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1V; Power Dissipation Pd:150W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:140A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:1°C/W; Lead Spacing:2.54mm; No. of Transistors:1; Package / Case:TO-220AB; Power Dissipation Pd:150W; Power Dissipation Pd:150W; Pulse Current Idm:480A; Termination Type:Through Hole; Voltage Vds Typ:30V; Voltage Vgs Max:1V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2V; Voltage Vgs th Min:1V
***emi
N-Channel PowerTrench® MOSFET 30V, 114A, 5.3mΩ
***Yang
Trans MOSFET N-CH 30V 16A 3-Pin(3+Tab) TO-220AB Tube - Rail/Tube
***ter Electronics
30V,114A,5.3 OHM,N-CH,TO220,POWER TRENCH MOSFET
***r Electronics
Power Field-Effect Transistor, 80A I(D), 30V, 0.0066ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***rchild Semiconductor
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.
***(Formerly Allied Electronics)
MOSFET, N Ch., 30V, 105A, 6 MOHM, 23 NCQG, TO-220AB, Pb-Free
***ure Electronics
Single N-Channel 30 V 6 mOhm 23 nC HEXFET® Power Mosfet - TO-220-3
***ineon SCT
30V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS
***p One Stop Global
Trans MOSFET N-CH 30V 105A 3-Pin(3+Tab) TO-220AB Tube
***ineon
Benefits: RoHS Compliant; Industry-leading quality; Low RDS(ON) at 4.5V VGS; Fully Characterized Avalanche Voltage and Current; Ultra-Low Gate Impedance; Logic Level
***ark
N Channel Mosfet, 30V, 105A, To-220Ab; Transistor Polarity:n Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:105A; On Resistance Rds(On):0.006Ohm; Transistor Mounting:through Hole; Rds(On) Test Voltage Vgs:10V Rohs Compliant: Yes
***ment14 APAC
MOSFET, N, 30V, 105A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:105A; Drain Source Voltage Vds:30V; On Resistance Rds(on):6mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.25V; Power Dissipation Pd:110W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:105A; Junction to Case Thermal Resistance A:1.32°C/W; On State resistance @ Vgs = 10V:6ohm; Package / Case:TO-220AB; Power Dissipation Pd:110W; Power Dissipation Pd:110W; Pulse Current Idm:420A; Termination Type:Through Hole; Voltage Vds Typ:30V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2.25V
***et Europe
Trans MOSFET N-CH 30V 85A 3-Pin(3+Tab) TO-220AB
***ronik
MOSFET 30V 85A 3.6mOhm TO220 RoHSconf
***ment14 APAC
MOSFET,N CH,W DIODE,30V,85A,TO220AB; Transistor Polarity:N Channel; Continuous Drain Current Id:85A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.003ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:78.1W; Operating Temperature Min:-55°C; Operating Temperature Max:175°C; Transistor Case Style:TO-220AB; No. of Pins:3; Operating Temperature Range:-55°C to +175°C; Voltage Vgs Max:20V
***ark
RAIL/30V,92A,5.9m ohm ,NCH,TO220,POWER TRENCH MOSFET
***Yang
Trans MOSFET N-CH 30V 16A 3-Pin(3+Tab) TO-220AB Tube - Rail/Tube
***emi
N-Channel PowerTrench® MOSFET 30V, 92A, 5.9mΩ
***r Electronics
Power Field-Effect Transistor, 80A I(D), 30V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***rchild Semiconductor
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.
Parte # Mfg. Descripción Valores Precio
BUK9507-30B,127
DISTI # C1S537100441902
NexperiaTrans MOSFET N-CH 30V 108A Automotive 3-Pin(3+Tab) TO-220AB Rail170
  • 50:$0.6470
  • 1:$0.6550
BUK9507-30B,127
DISTI # 568-5725-5-ND
NexperiaMOSFET N-CH 30V 75A TO220AB
RoHS: Compliant
Min Qty: 5000
Container: Tube
Limited Supply - Call
    BUK9507-30B,127
    DISTI # BUK9507-30B127
    NexperiaTrans MOSFET N-CH 30V 108A 3-Pin(3+Tab) TO-220AB Tube - Bulk (Alt: BUK9507-30B127)
    RoHS: Not Compliant
    Min Qty: 544
    Container: Bulk
    Americas - 0
    • 544:$0.6699
    • 546:$0.6439
    • 1090:$0.6189
    • 2720:$0.5959
    • 5440:$0.5849
    BUK9507-30B
    DISTI # 771-BUK9507-30B
    NexperiaMOSFET HIGH PERF TRENCHMOS
    RoHS: Compliant
    0
      BUK9507-30B,127
      DISTI # 771-BUK9507-30B127
      NexperiaMOSFET HIGH PERF TRENCHMOS
      RoHS: Compliant
      0
        BUK9507-30B127NXP SemiconductorsNow Nexperia BUK9507-30B - Power Field-Effect Transistor, 75A I(D), 30V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
        RoHS: Not Compliant
        11973
        • 1000:$0.3800
        • 500:$0.4000
        • 100:$0.4200
        • 25:$0.4400
        • 1:$0.4700
        Imagen Parte # Descripción
        BUK9507-30B

        Mfr.#: BUK9507-30B

        OMO.#: OMO-BUK9507-30B-1152

        MOSFET HIGH PERF TRENCHMOS
        BUK9507-30B127

        Mfr.#: BUK9507-30B127

        OMO.#: OMO-BUK9507-30B127-1190

        Now Nexperia BUK9507-30B - Power Field-Effect Transistor, 75A I(D), 30V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
        BUK9507-30B,127

        Mfr.#: BUK9507-30B,127

        OMO.#: OMO-BUK9507-30B-127-NEXPERIA

        RF Bipolar Transistors MOSFET HIGH PERF TRENCHMOS
        Disponibilidad
        Valores:
        Available
        En orden:
        4500
        Ingrese la cantidad:
        El precio actual de BUK9507-30B,127 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
        Precio de referencia (USD)
        Cantidad
        Precio unitario
        Ext. Precio
        1
        1,03 US$
        1,03 US$
        10
        0,98 US$
        9,78 US$
        100
        0,93 US$
        92,61 US$
        500
        0,87 US$
        437,35 US$
        1000
        0,82 US$
        823,20 US$
        Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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