We guarantee 100% customer satisfaction.
Quality GuaranteesWe provide 90-360 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.
we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.
Email: [email protected]
| Imagen | Parte # | Descripción |
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Mfr.#: SQM200JB-7K5 OMO.#: OMO-SQM200JB-7K5 |
Wirewound Resistors - Through Hole |
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Mfr.#: SQM200JB-39R OMO.#: OMO-SQM200JB-39R |
Wirewound Resistors - Through Hole |
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Mfr.#: SQM200JB-9K1 OMO.#: OMO-SQM200JB-9K1 |
Wirewound Resistors - Through Hole |
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Mfr.#: SQM200JB-0R56 OMO.#: OMO-SQM200JB-0R56 |
Wirewound Resistors - Through Hole |
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Mfr.#: SQM200JB-0R15 OMO.#: OMO-SQM200JB-0R15 |
Wirewound Resistors - Through Hole |
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Mfr.#: SQM200JB-62K OMO.#: OMO-SQM200JB-62K |
Wirewound Resistors - Through Hole |
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Mfr.#: SQM200JB-160R OMO.#: OMO-SQM200JB-160R |
Wirewound Resistors - Through Hole |
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Mfr.#: SQM200JB-56R OMO.#: OMO-SQM200JB-56R |
Wirewound Resistors - Through Hole |
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Mfr.#: SQM200N04-1M7L_GE3 |
MOSFET N-CH 40V 200A TO-263 |
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Mfr.#: SQM200N041M1LGE3 OMO.#: OMO-SQM200N041M1LGE3-1190 |
Power Field-Effect Transistor, 200A I(D), 40V, 0.0011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |
