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FFSH30120ADN-F155

FFSH30120ADN-F155
Mfr. #:
FFSH30120ADN-F155
Fabricante:
ON Semiconductor / Fairchild
Descripción:
Schottky Diodes & Rectifiers 1200V SiC SBD 30A
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
FFSH30120ADN-F155 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
FFSH30120ADN-F155 más información
Atributo del producto
Valor de atributo
Fabricante:
EN Semiconductor
Categoria de producto:
Diodos y rectificadores Schottky
RoHS:
Y
Producto:
Diodos de carburo de silicio Schottky
Estilo de montaje:
A través del orificio
Paquete / Caja:
TO-247-3
Si - Corriente directa:
30 A
Vrrm - Voltaje inverso repetitivo:
1.2 kV
Vf - Voltaje directo:
1.45 V
Ifsm - Corriente de sobretensión directa:
125 A
Configuración:
Doble
Tecnología:
Sic
Ir - Corriente inversa:
200 uA
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 175 C
Serie:
FFSH30120ADN
Embalaje:
Tubo
Marca:
ON Semiconductor / Fairchild
Pd - Disipación de energía:
195 W
Tipo de producto:
Diodos y rectificadores Schottky
Cantidad de paquete de fábrica:
450
Subcategoría:
Diodes & Rectifiers
Vr - Voltaje inverso:
1.2 kV
Parte # Alias:
FFSH30120ADN_F155
Unidad de peso:
0.225401 oz
Tags
FFSH30120AD, FFSH301, FFSH3, FFSH, FFS
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
FFSH Series 1200 V 200 uA Through Hole Schottky Barrier Diodes - TO-247-3
***Semiconductor
SiC Diode, 1200V, 30A, TO-247-3, Common Cathode
***ark
Sic To247 Sbd 30A 1200V Rohs Compliant: Yes
***ical
Diode Schottky 1.2KV 30A 3-Pin(3+Tab) TO-247 Tube
***nell
DIODE, SILICON CARBIDE, 1.2KV, TO-247
FFSH SiC Schottky Diodes
ON Semiconductor FFSH Silicon Carbide (SiC) Schottky Diodes provide improved system efficiency and have a max junction temperature of 175ºC. These Schottky Diodes have no switching loss and a high surge current capacity. The diodes use Silicon Carbide semiconductor material for higher operating frequency, increasing power density and reduction of system size/cost. This ensures high reliability and robust operation during surge or over-voltage conditions.
1200V SiC Schottky Diodes
ON Semiconductor 1200V Silicon Carbide (SiC) Schottky Diodes provide superior switching performance and higher reliability to silicon-based devices. These SiC Schottky diodes feature no reverse recovery current, temperature-independent switching, and excellent thermal performance. The system benefits include high-efficiency, fast operating frequency, high-power density, low EMI, and reduced system size and cost.
Wide Bandgap SiC Devices
ON Semiconductor Wide Bandgap Silicon Carbide (SiC) Devices incorporate a completely new technology that provides superior switching performance and higher reliability compared to silicon. The system benefits include the highest efficiency, faster-operating frequency, increased power density, reduced EMI, and reduced system size and cost. ON Semiconductor’s SiC portfolio includes 650V and 1200V diodes, 650V and 1200V IGBT and SiC diode Power Integrated Modules (PIMs), 1200V MOSFETs and SiC MOSFET drivers, and AEC-Q100 qualified devices.
Silicon Carbide Schottky Diodes
ON Semiconductor Silicon Carbide (SiC) Schottky Diodes provide superior switching performance and higher reliability to silicon-based devices. SiC Schottky Diodes feature no reverse recovery current, temperature independent switching, and excellent thermal performance. System benefits include high efficiency, fast operating frequency, high power density, low EMI, and reduced system size and cost.  ON Semiconductor offers 650V and 1200V devices in a range of current and package options, ideal for next-generation power system designs.
Parte # Mfg. Descripción Valores Precio
FFSH30120ADN-F155
DISTI # V79:2366_23246359		ON Semiconductor1200V SIC SBD 30A TO247 PKG (1194
  • 250:$11.8300
  • 100:$12.0500
  • 25:$13.8000
  • 10:$14.5400
  • 1:$15.9500
FFSH30120ADN-F155
DISTI # V99:2348_16116318		ON Semiconductor1200V SIC SBD 30A TO247 PKG (1186
  • 100:$12.7000
  • 25:$13.8000
  • 10:$14.5400
  • 1:$15.9500
FFSH30120ADN-F155
DISTI # FFSH30120ADN-F155-ND		ON SemiconductorDIODE SIC 1200V 15A TO247
RoHS: Compliant
Min Qty: 450
Container: Tube		Temporarily Out of Stock
  • 450:$12.1520
FFSH30120ADN-F155
DISTI # 31352888		ON Semiconductor1200V SIC SBD 30A TO247 PKG (1167400
  • 450:$15.9500
FFSH30120ADN-F155
DISTI # 30677123		ON Semiconductor1200V SIC SBD 30A TO247 PKG (110350
  • 450:$12.2316
FFSH30120ADN-F155
DISTI # 32380041		ON Semiconductor1200V SIC SBD 30A TO247 PKG (1194
  • 1:$15.9500
FFSH30120ADN-F155
DISTI # 25944271		ON Semiconductor1200V SIC SBD 30A TO247 PKG (1186
  • 1:$15.9500
FFSH30120ADN_F155
DISTI # FFSH30120ADN-F155		ON SemiconductorDiode Schottky 1200V 30A 3-Pin TO-247 Tube - Rail/Tube (Alt: FFSH30120ADN-F155)
RoHS: Compliant
Min Qty: 450
Container: Tube		Americas - 1800
  • 4500:$9.5900
  • 2250:$9.8900
  • 1350:$10.0900
  • 900:$10.3900
  • 450:$10.6900
FFSH30120ADN_F155
DISTI # FFSH30120ADN-F155		ON SemiconductorDiode Schottky 1200V 30A 3-Pin TO-247 Tube (Alt: FFSH30120ADN-F155)
RoHS: Compliant
Min Qty: 1
Container: Tube		Europe - 0
  • 1000:€9.1900
  • 500:€9.8900
  • 100:€10.2900
  • 50:€10.5900
  • 25:€11.0900
  • 10:€11.4900
  • 1:€12.5900
FFSH30120ADN_F155
DISTI # FFSH30120ADN-F155		ON SemiconductorDiode Schottky 1200V 30A 3-Pin TO-247 Tube - Bulk (Alt: FFSH30120ADN-F155)
Min Qty: 29
Container: Bulk		Americas - 0
  • 290:$10.6900
  • 145:$10.9900
  • 87:$11.0900
  • 29:$11.2900
  • 58:$11.2900
FFSH30120ADN-F155.
DISTI # 96AC0054		ON SemiconductorSIC TO247 SBD 30A 1200V ROHS COMPLIANT: YES2250
  • 4500:$9.5900
  • 2250:$9.8900
  • 1350:$9.9900
  • 900:$10.0900
  • 1:$10.1900
FFSH30120ADN-F155
DISTI # 512-FFSH30120ADNF155		ON SemiconductorSchottky Diodes & Rectifiers 1200V SiC SBD 30A
RoHS: Compliant		129
  • 1:$16.0000
  • 10:$14.7200
  • 25:$14.1100
  • 100:$12.4300
  • 250:$11.8200
  • 500:$11.0600
FFSH30120ADN-F155ON SemiconductorRectifier Diode, Schottky, 1 Phase, 2 Element, 15A, 1200V V(RRM), Silicon Carbide, TO-247AB
RoHS: Compliant		1800
  • 1000:$11.4600
  • 500:$12.0600
  • 100:$12.5600
  • 25:$13.1000
  • 1:$14.1100
FFSH30120ADN-F155Fairchild Semiconductor CorporationRectifier Diode, Schottky, 1 Phase, 2 Element, 15A, 1200V V(RRM), Silicon Carbide, TO-247AB
RoHS: Compliant		434
  • 1000:$11.4600
  • 500:$12.0600
  • 100:$12.5600
  • 25:$13.1000
  • 1:$14.1100
FFSH30120ADN-F155
DISTI # 2610669		ON SemiconductorDIODE, SILICON CARBIDE, 1.2KV, TO-247
RoHS: Compliant		387
  • 100:$19.3500
  • 10:$20.5300
  • 1:$21.8700
FFSH30120ADN-F155
DISTI # 2610669		ON SemiconductorDIODE, SILICON CARBIDE, 1.2KV, TO-247387
  • 100:£8.5400
  • 50:£9.1200
  • 10:£9.6800
  • 5:£10.9900
  • 1:£11.3000
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Disponibilidad
Valores:
129
En orden:
2112
Ingrese la cantidad:
El precio actual de FFSH30120ADN-F155 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
16,00 US$
16,00 US$
10
14,72 US$
147,20 US$
25
14,11 US$
352,75 US$
100
12,43 US$
1 243,00 US$
250
11,82 US$
2 955,00 US$
500
11,06 US$
5 530,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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