ZXTP25012

ZXTP25012EFHTA vs ZXTP25012EZTA vs ZXTP25012EFH

 
PartNumberZXTP25012EFHTAZXTP25012EZTAZXTP25012EFH
DescriptionBipolar Transistors - BJT PNP 12V HIGH GAINBipolar Transistors - BJT PNP 12V HIGH GAIN
ManufacturerDiodes IncorporatedDiodes Incorporated-
Product CategoryBipolar Transistors - BJTBipolar Transistors - BJT-
RoHSYY-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseSOT-23-3SOT-89-3-
Transistor PolarityPNPPNP-
ConfigurationSingleSingle-
Collector Emitter Voltage VCEO Max12 V- 12 V-
Collector Base Voltage VCBO12 V- 20 V-
Emitter Base Voltage VEBO7 V- 7 V-
Maximum DC Collector Current4 A- 4.5 A-
Gain Bandwidth Product fT310 MHz310 MHz-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
SeriesZXTP250ZXTP25012-
DC Current Gain hFE Max500 at 10 mA, 2 V1500 at - 10 mA, - 2 V-
Height1.02 mm1.6 mm-
Length3.04 mm4.6 mm-
PackagingReelReel-
Width1.4 mm2.6 mm-
BrandDiodes IncorporatedDiodes Incorporated-
DC Collector/Base Gain hfe Min500 at 10 mA, 2 V, 300 at 1 A, 2 V, 50 at 4 A, 2 V40 at -4.5 A, - 2 V-
Pd Power Dissipation1810 mW19200 mW-
Product TypeBJTs - Bipolar TransistorsBJTs - Bipolar Transistors-
Factory Pack Quantity30001000-
SubcategoryTransistorsTransistors-
Unit Weight0.000282 oz0.004603 oz-
Collector Emitter Saturation Voltage-- 70 mV-
Continuous Collector Current-- 4.5 A-
Fabricante Parte # Descripción RFQ
Diodes Incorporated
Diodes Incorporated
ZXTP25012EFHTA Bipolar Transistors - BJT PNP 12V HIGH GAIN
ZXTP25012EZTA Bipolar Transistors - BJT PNP 12V HIGH GAIN
ZXTP25012EFH Nuevo y original
ZXTP25012EZTA-CUT TAPE Nuevo y original
ZXTP25012EZTA Bipolar Transistors - BJT PNP 12V HIGH GAIN
ZXTP25012EFHTA Bipolar Transistors - BJT PNP 12V HIGH GAIN
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