ZXT13N5

ZXT13N50DE6TA vs ZXT13N50DE6 vs ZXT13N50DE6QTA

 
PartNumberZXT13N50DE6TAZXT13N50DE6ZXT13N50DE6QTA
DescriptionBipolar Transistors - BJT NPN 50V Low SatTRANSISTOR, NPN, SOT23-6, Transistor Polarity:NPN, Collector Emitter Voltage V(br)ceo:50V, Transition Frequency ft:115MHz, Power Dissipation Pd:1.1W, DC Collector Current:4A, DC Current Gain hFE
ManufacturerDiodes Incorporated--
Product CategoryBipolar Transistors - BJT--
RoHSY--
Mounting StyleSMD/SMT--
Package / CaseSOT-23-6--
Transistor PolarityNPN--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max50 V--
Collector Base Voltage VCBO100 V--
Emitter Base Voltage VEBO7.5 V--
Collector Emitter Saturation Voltage145 mV--
Maximum DC Collector Current4 A--
Gain Bandwidth Product fT115 MHz--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
SeriesZXT13N50--
Height1.3 mm--
Length3.1 mm--
PackagingReel--
Width1.8 mm--
BrandDiodes Incorporated--
Continuous Collector Current4 A--
Pd Power Dissipation1.1 W--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity3000--
SubcategoryTransistors--
Unit Weight0.000229 oz--
Fabricante Parte # Descripción RFQ
Diodes Incorporated
Diodes Incorporated
ZXT13N50DE6TA Bipolar Transistors - BJT NPN 50V Low Sat
ZXT13N50DE6 TRANSISTOR, NPN, SOT23-6, Transistor Polarity:NPN, Collector Emitter Voltage V(br)ceo:50V, Transition Frequency ft:115MHz, Power Dissipation Pd:1.1W, DC Collector Current:4A, DC Current Gain hFE
ZXT13N50DE6QTA Nuevo y original
ZXT13N50DE6TA Nuevo y original
ZXT13N50DE6TAPBF Nuevo y original
ZXT13N50DE6TC Bipolar Transistors - BJT 50V NPN SuperSOT4
ZXT13N50DE9TA Nuevo y original
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