 |  | | |
| PartNumber | ZXMN10B08E6TA | ZXMN10B08E6T | ZXMN10B08E6TA-CUT TAPE |
| Description | MOSFET 100V N-Chnl UMOS | ||
| Manufacturer | Diodes Incorporated | Diodes Incorporated | - |
| Product Category | MOSFET | FETs - Single | - |
| RoHS | Y | - | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | SOT-26-6 | - | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 100 V | - | - |
| Id Continuous Drain Current | 1.9 A | - | - |
| Rds On Drain Source Resistance | 230 mOhms | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Pd Power Dissipation | 1.1 W | - | - |
| Configuration | Single | Single Quad Drain | - |
| Channel Mode | Enhancement | Enhancement | - |
| Packaging | Reel | Digi-ReelR Alternate Packaging | - |
| Height | 1.3 mm | - | - |
| Length | 3.1 mm | - | - |
| Product | MOSFET Small Signal | - | - |
| Series | ZXMN10 | ZXMN10 | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Type | MOSFET | - | - |
| Width | 1.8 mm | - | - |
| Brand | Diodes Incorporated | - | - |
| Fall Time | 2.1 ns | 2.1 ns | - |
| Product Type | MOSFET | - | - |
| Rise Time | 2.1 ns | 2.1 ns | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 12.1 ns | 12.1 ns | - |
| Typical Turn On Delay Time | 2.9 ns | 2.9 ns | - |
| Unit Weight | 0.000529 oz | 0.000529 oz | - |
| Package Case | - | SOT-23-6 | - |
| Operating Temperature | - | -55°C ~ 150°C (TJ) | - |
| Mounting Type | - | Surface Mount | - |
| Supplier Device Package | - | SOT-26 | - |
| FET Type | - | MOSFET N-Channel, Metal Oxide | - |
| Power Max | - | 1.1W | - |
| Drain to Source Voltage Vdss | - | 100V | - |
| Input Capacitance Ciss Vds | - | 497pF @ 50V | - |
| FET Feature | - | Standard | - |
| Current Continuous Drain Id 25°C | - | 1.6A (Ta) | - |
| Rds On Max Id Vgs | - | 230 mOhm @ 1.6A, 10V | - |
| Vgs th Max Id | - | 3V @ 250μA | - |
| Gate Charge Qg Vgs | - | 9.2nC @ 10V | - |
| Pd Power Dissipation | - | 1.1 W | - |
| Vgs Gate Source Voltage | - | 20 V | - |
| Id Continuous Drain Current | - | 1.9 A | - |
| Vds Drain Source Breakdown Voltage | - | 100 V | - |
| Rds On Drain Source Resistance | - | 230 mOhms | - |
| Fabricante | Parte # | Descripción | RFQ |
|---|---|---|---|
Diodes Incorporated |
ZXMN10B08E6TA | MOSFET 100V N-Chnl UMOS | |
| ZXMN10B08E6T | Nuevo y original | ||
| ZXMN10B08E6TAPBF | Nuevo y original | ||
| ZXMN10B08E6TC | MOSFET N-CH 100V 1.6A SOT23-6 | ||
| ZXMN10B08E6TA-CUT TAPE | Nuevo y original | ||
| ZXMN10B08E6TA | Darlington Transistors MOSFET 100V N-Chnl UMOS |