ZXMC3A18

ZXMC3A18DN8TA vs ZXMC3A18DN8 vs ZXMC3A18DN8TC

 
PartNumberZXMC3A18DN8TAZXMC3A18DN8ZXMC3A18DN8TC
DescriptionMOSFET 30V COMPLEMENTARY ENHANCEMENT MODE
ManufacturerDiodes Incorporated-
Product CategoryMOSFET-IC Chips
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseSO-8--
Number of Channels2 Channel--
Transistor PolarityN-Channel, P-Channel--
Vds Drain Source Breakdown Voltage30 V--
Id Continuous Drain Current7.6 A--
Rds On Drain Source Resistance25 mOhms--
Vgs Gate Source Voltage20 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation2.1 W--
ConfigurationDual--
Channel ModeEnhancement--
PackagingReel--
Height1.5 mm--
Length5 mm--
SeriesZXMC3A--
Transistor Type1 N-Channel, 1 P-Channel--
Width4 mm--
BrandDiodes Incorporated--
Fall Time8.5 ns, 38 ns--
Product TypeMOSFET--
Rise Time8.7 ns, 9.5 ns--
Factory Pack Quantity500--
SubcategoryMOSFETs--
Typical Turn Off Delay Time33 ns, 60 ns--
Typical Turn On Delay Time5.5 ns, 4.8 ns--
Unit Weight0.002610 oz--
Fabricante Parte # Descripción RFQ
Diodes Incorporated
Diodes Incorporated
ZXMC3A18DN8TA MOSFET 30V COMPLEMENTARY ENHANCEMENT MODE
ZXMC3A18DN8TA MOSFET 30V COMPLEMENTARY ENHANCEMENT MODE
ZXMC3A18DN8 Nuevo y original
ZXMC3A18DN8TC Nuevo y original
Top