ZVP2110A

ZVP2110A vs ZVP2110ASTOB vs ZVP2110AST

 
PartNumberZVP2110AZVP2110ASTOBZVP2110AST
DescriptionMOSFET P-Chnl 100VMOSFET P-Chnl 100V
ManufacturerDiodes IncorporatedDiodes IncorporatedDiodes Incorporated
Product CategoryMOSFETMOSFETTransistors - FETs, MOSFETs - Single
RoHSYY-
TechnologySiSiSi
Mounting StyleThrough HoleThrough HoleThrough Hole
Package / CaseTO-92-3TO-92-3-
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityP-ChannelP-ChannelP-Channel
Vds Drain Source Breakdown Voltage100 V100 V-
Id Continuous Drain Current230 mA230 mA-
Rds On Drain Source Resistance8 Ohms8 Ohms-
Vgs th Gate Source Threshold Voltage1.5 V--
Vgs Gate Source Voltage10 V20 V-
Minimum Operating Temperature- 55 C- 55 C- 55 C
Maximum Operating Temperature+ 150 C+ 150 C+ 150 C
Pd Power Dissipation700 mW700 mW-
ConfigurationSingleSingleSingle
Channel ModeEnhancementEnhancementEnhancement
PackagingReelBulkBulk
Height4.01 mm--
Length4.77 mm--
ProductMOSFET Small SignalMOSFET Small Signal-
SeriesZVP2110-ZVP2110
Transistor Type1 P-Channel1 P-Channel1 P-Channel
TypeFETFET-
Width2.41 mm--
BrandDiodes IncorporatedDiodes Incorporated-
Forward Transconductance Min125 mS--
Fall Time15 ns15 ns15 ns
Product TypeMOSFETMOSFET-
Rise Time15 ns15 ns15 ns
Factory Pack Quantity40004000-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time12 ns12 ns12 ns
Typical Turn On Delay Time7 ns7 ns7 ns
Unit Weight0.016000 oz0.016000 oz0.016000 oz
Package Case--TO-92-3
Pd Power Dissipation--700 mW
Vgs Gate Source Voltage--20 V
Id Continuous Drain Current--- 230 mA
Vds Drain Source Breakdown Voltage--- 100 V
Rds On Drain Source Resistance--8 Ohms
Fabricante Parte # Descripción RFQ
Diodes Incorporated
Diodes Incorporated
ZVP2110A MOSFET P-Chnl 100V
ZVP2110ASTZ MOSFET P-Chnl 100V
ZVP2110ASTOB MOSFET P-Chnl 100V
ZVP2110A Trans MOSFET P-CH 100V 0.23A Automotive 3-Pin E-Line
ZVP2110AST Nuevo y original
ZVP2110ASTZ Trans MOSFET P-CH 100V 0.23A Automotive 3-Pin E-Line Box
Top