 |  | | |
| PartNumber | ZVN2110A | ZVN2110AGTA | ZVN2110AQ |
| Description | MOSFET N-Chnl 100V | ||
| Manufacturer | Diodes Incorporated | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | Through Hole | - | - |
| Package / Case | TO-92-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 100 V | - | - |
| Id Continuous Drain Current | 320 mA | - | - |
| Rds On Drain Source Resistance | 4 Ohms | - | - |
| Vgs th Gate Source Threshold Voltage | 800 mV | - | - |
| Vgs Gate Source Voltage | 10 V | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 700 mW | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Reel | - | - |
| Height | 4.01 mm | - | - |
| Length | 4.77 mm | - | - |
| Product | MOSFET Small Signal | - | - |
| Series | ZVN2110 | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Type | FET | - | - |
| Width | 2.41 mm | - | - |
| Brand | Diodes Incorporated | - | - |
| Forward Transconductance Min | 250 mS | - | - |
| Fall Time | 13 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 8 ns | - | - |
| Factory Pack Quantity | 4000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 13 ns | - | - |
| Typical Turn On Delay Time | 7 ns | - | - |
| Unit Weight | 0.016000 oz | - | - |
| Fabricante | Parte # | Descripción | RFQ |
|---|---|---|---|
Diodes Incorporated |
ZVN2110A | MOSFET N-Chnl 100V | |
| ZVN2110ASTZ | MOSFET N-Chnl 100V | ||
| ZVN2110ASTOA | MOSFET N-Chnl 100V | ||
| ZVN2110A | Trans MOSFET N-CH 100V 0.32A Automotive 3-Pin E-Line | ||
| ZVN2110AGTA | Nuevo y original | ||
| ZVN2110AQ | Nuevo y original | ||
| ZVN2110ASTOA | MOSFET N-CH 100V 320MA TO92-3 | ||
| ZVN2110ASTOB | MOSFET N-CH 100V 320MA TO92-3 | ||
| ZVN2110ASTZ | IGBT Transistors MOSFET N-Chnl 100V |