ZTX75

ZTX758STZ

 
PartNumberZTX758STZ
DescriptionBipolar Transistors - BJT PNP Super E-Line
ManufacturerDiodes Incorporated
Product CategoryBipolar Transistors - BJT
RoHSY
Mounting StyleThrough Hole
Package / CaseTO-92-3
Transistor PolarityPNP
ConfigurationSingle
Collector Emitter Voltage VCEO Max- 400 V
Collector Base Voltage VCBO- 400 V
Emitter Base Voltage VEBO- 5 V
Collector Emitter Saturation Voltage- 0.5 V
Maximum DC Collector Current0.5 A
Gain Bandwidth Product fT50 MHz
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
SeriesZTX758
DC Current Gain hFE Max50 at 1 mA, 5 V
Height4.01 mm
Length4.77 mm
PackagingReel
Width2.41 mm
BrandDiodes Incorporated
Continuous Collector Current- 0.5 A
DC Collector/Base Gain hfe Min50 at 1 mA, 5 V, 50 at 100 mA, 5 V, 40 at 200 mA, 10 V
Pd Power Dissipation1 W
Product TypeBJTs - Bipolar Transistors
Factory Pack Quantity2000
SubcategoryTransistors
Unit Weight0.016000 oz
Fabricante Parte # Descripción RFQ
Diodes Incorporated
Diodes Incorporated
ZTX758STZ Bipolar Transistors - BJT PNP Super E-Line
ZTX758STZ Bipolar Transistors - BJT PNP Super E-Line
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