PartNumber | ZTX657STOB | ZTX657STOA | ZTX657S |
Description | Bipolar Transistors - BJT NPN Super E-Line | Bipolar Transistors - BJT NPN Super E-Line | |
Manufacturer | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated |
Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | Transistors - Bipolar (BJT) - RF |
RoHS | Y | Y | - |
Mounting Style | Through Hole | Through Hole | Through Hole |
Package / Case | TO-92-3 | TO-92-3 | - |
Transistor Polarity | NPN | NPN | NPN |
Configuration | Single | Single | Single |
Collector Emitter Voltage VCEO Max | 300 V | 300 V | - |
Collector Base Voltage VCBO | 300 V | 300 V | - |
Emitter Base Voltage VEBO | 5 V | 5 V | - |
Maximum DC Collector Current | 0.5 A | 0.5 A | 0.5 A |
Gain Bandwidth Product fT | 30 MHz | 30 MHz | 30 MHz |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
DC Current Gain hFE Max | 50 at 100 mA, 5 V | 50 at 100 mA, 5 V | 50 at 100 mA at 5 V |
Height | 4.01 mm | 4.01 mm | - |
Length | 4.77 mm | 4.77 mm | - |
Packaging | Bulk | Bulk | Bulk |
Width | 2.41 mm | 2.41 mm | - |
Brand | Diodes Incorporated | Diodes Incorporated | - |
Continuous Collector Current | 0.5 A | 0.5 A | 0.5 A |
DC Collector/Base Gain hfe Min | 50 at 100 mA, 5 V, 40 at 10 mA, 5 V | - | - |
Pd Power Dissipation | 1 W | 1 W | - |
Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | - |
Factory Pack Quantity | 4000 | 4000 | - |
Subcategory | Transistors | Transistors | - |
Unit Weight | 0.016000 oz | 0.016000 oz | 0.016000 oz |
Series | - | - | ZTX657 |
Package Case | - | - | TO-92 |
Pd Power Dissipation | - | - | 1 W |
Collector Emitter Voltage VCEO Max | - | - | 300 V |
Collector Base Voltage VCBO | - | - | 300 V |
Emitter Base Voltage VEBO | - | - | 5 V |
DC Collector Base Gain hfe Min | - | - | 50 at 100 mA at 5 V 40 at 10 mA at 5 V |