ZTX657S

ZTX657STOB vs ZTX657STOA vs ZTX657S

 
PartNumberZTX657STOBZTX657STOAZTX657S
DescriptionBipolar Transistors - BJT NPN Super E-LineBipolar Transistors - BJT NPN Super E-Line
ManufacturerDiodes IncorporatedDiodes IncorporatedDiodes Incorporated
Product CategoryBipolar Transistors - BJTBipolar Transistors - BJTTransistors - Bipolar (BJT) - RF
RoHSYY-
Mounting StyleThrough HoleThrough HoleThrough Hole
Package / CaseTO-92-3TO-92-3-
Transistor PolarityNPNNPNNPN
ConfigurationSingleSingleSingle
Collector Emitter Voltage VCEO Max300 V300 V-
Collector Base Voltage VCBO300 V300 V-
Emitter Base Voltage VEBO5 V5 V-
Maximum DC Collector Current0.5 A0.5 A0.5 A
Gain Bandwidth Product fT30 MHz30 MHz30 MHz
Minimum Operating Temperature- 55 C- 55 C- 55 C
Maximum Operating Temperature+ 150 C+ 150 C+ 150 C
DC Current Gain hFE Max50 at 100 mA, 5 V50 at 100 mA, 5 V50 at 100 mA at 5 V
Height4.01 mm4.01 mm-
Length4.77 mm4.77 mm-
PackagingBulkBulkBulk
Width2.41 mm2.41 mm-
BrandDiodes IncorporatedDiodes Incorporated-
Continuous Collector Current0.5 A0.5 A0.5 A
DC Collector/Base Gain hfe Min50 at 100 mA, 5 V, 40 at 10 mA, 5 V--
Pd Power Dissipation1 W1 W-
Product TypeBJTs - Bipolar TransistorsBJTs - Bipolar Transistors-
Factory Pack Quantity40004000-
SubcategoryTransistorsTransistors-
Unit Weight0.016000 oz0.016000 oz0.016000 oz
Series--ZTX657
Package Case--TO-92
Pd Power Dissipation--1 W
Collector Emitter Voltage VCEO Max--300 V
Collector Base Voltage VCBO--300 V
Emitter Base Voltage VEBO--5 V
DC Collector Base Gain hfe Min--50 at 100 mA at 5 V 40 at 10 mA at 5 V
Fabricante Parte # Descripción RFQ
Diodes Incorporated
Diodes Incorporated
ZTX657STZ Bipolar Transistors - BJT NPN Super E-Line
ZTX657STOB Bipolar Transistors - BJT NPN Super E-Line
ZTX657STOA Bipolar Transistors - BJT NPN Super E-Line
ZTX657S Nuevo y original
ZTX657STOA TRANS NPN 300V 0.5A E-LINE
ZTX657STOB TRANS NPN 300V 0.5A E-LINE
ZTX657STZ Bipolar Transistors - BJT NPN Super E-Line
Top