| PartNumber | ZTX415 | ZTX415STZ | ZTX415STOB |
| Description | Bipolar Transistors - BJT NPN Avalanche | Bipolar Transistors - BJT NPN Avalanche | Bipolar Transistors - BJT NPN Avalanche |
| Manufacturer | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated |
| Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | Bipolar Transistors - BJT |
| RoHS | Y | Y | Y |
| Mounting Style | Through Hole | Through Hole | Through Hole |
| Package / Case | TO-92-3 | TO-92-3 | TO-92-3 |
| Transistor Polarity | NPN | NPN | NPN |
| Configuration | Single | Single | Single |
| Collector Emitter Voltage VCEO Max | 100 V | 100 V | 100 V |
| Collector Base Voltage VCBO | 260 V | 260 V | 260 V |
| Emitter Base Voltage VEBO | 6 V | 6 V | 6 V |
| Collector Emitter Saturation Voltage | 0.5 V | 0.5 V | - |
| Maximum DC Collector Current | 0.5 A | 0.5 A | 0.5 A |
| Gain Bandwidth Product fT | 40 MHz | 40 MHz | 40 MHz |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Series | ZTX415 | ZTX415 | - |
| DC Current Gain hFE Max | 25 at 10 mA, 10 V | 25 at 10 mA, 10 V | 25 at 10 mA, 10 V |
| Height | 4.01 mm | 4.01 mm | 4.01 mm |
| Length | 4.77 mm | 4.77 mm | 4.77 mm |
| Packaging | Bulk | Bulk | Bulk |
| Width | 2.41 mm | 2.41 mm | 2.41 mm |
| Brand | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated |
| Continuous Collector Current | 0.5 A | 0.5 A | 0.5 A |
| DC Collector/Base Gain hfe Min | 25 at 10 mA, 10 V | - | - |
| Pd Power Dissipation | 680 mW | 680 mW | 680 mW |
| Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors |
| Factory Pack Quantity | 4000 | 2000 | 4000 |
| Subcategory | Transistors | Transistors | Transistors |
| Unit Weight | 0.016000 oz | 0.016000 oz | 0.016000 oz |