ZTX415

ZTX415 vs ZTX415STZ vs ZTX415STOB

 
PartNumberZTX415ZTX415STZZTX415STOB
DescriptionBipolar Transistors - BJT NPN AvalancheBipolar Transistors - BJT NPN AvalancheBipolar Transistors - BJT NPN Avalanche
ManufacturerDiodes IncorporatedDiodes IncorporatedDiodes Incorporated
Product CategoryBipolar Transistors - BJTBipolar Transistors - BJTBipolar Transistors - BJT
RoHSYYY
Mounting StyleThrough HoleThrough HoleThrough Hole
Package / CaseTO-92-3TO-92-3TO-92-3
Transistor PolarityNPNNPNNPN
ConfigurationSingleSingleSingle
Collector Emitter Voltage VCEO Max100 V100 V100 V
Collector Base Voltage VCBO260 V260 V260 V
Emitter Base Voltage VEBO6 V6 V6 V
Collector Emitter Saturation Voltage0.5 V0.5 V-
Maximum DC Collector Current0.5 A0.5 A0.5 A
Gain Bandwidth Product fT40 MHz40 MHz40 MHz
Minimum Operating Temperature- 55 C- 55 C- 55 C
Maximum Operating Temperature+ 150 C+ 150 C+ 150 C
SeriesZTX415ZTX415-
DC Current Gain hFE Max25 at 10 mA, 10 V25 at 10 mA, 10 V25 at 10 mA, 10 V
Height4.01 mm4.01 mm4.01 mm
Length4.77 mm4.77 mm4.77 mm
PackagingBulkBulkBulk
Width2.41 mm2.41 mm2.41 mm
BrandDiodes IncorporatedDiodes IncorporatedDiodes Incorporated
Continuous Collector Current0.5 A0.5 A0.5 A
DC Collector/Base Gain hfe Min25 at 10 mA, 10 V--
Pd Power Dissipation680 mW680 mW680 mW
Product TypeBJTs - Bipolar TransistorsBJTs - Bipolar TransistorsBJTs - Bipolar Transistors
Factory Pack Quantity400020004000
SubcategoryTransistorsTransistorsTransistors
Unit Weight0.016000 oz0.016000 oz0.016000 oz
Fabricante Parte # Descripción RFQ
Diodes Incorporated
Diodes Incorporated
ZTX415 Bipolar Transistors - BJT NPN Avalanche
ZTX415STZ Bipolar Transistors - BJT NPN Avalanche
ZTX415STOB Bipolar Transistors - BJT NPN Avalanche
ZTX415STOB Bipolar Transistors - BJT NPN Avalanche
ZTX415 Bipolar Transistors - BJT NPN Avalanche
ZTX415STZ Bipolar Transistors - BJT NPN Avalanche
ZTX415M1TA Nuevo y original
ZTX415STOA Bipolar Transistors - BJT NPN Avalanche
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