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| PartNumber | WND10P08XQ | WND100FET | WND10RFET |
| Description | Diodes - General Purpose, Power, Switching Standard reverse recovery pwr diode | Wirewound Resistors - Through Hole 3W 100 ohm 1% | Wirewound Resistors - Through Hole 3W 10 ohm 1% |
| Manufacturer | WeEn Semiconductors | Ohmite | Ohmite |
| Product Category | Diodes - General Purpose, Power, Switching | Wirewound Resistors - Through Hole | Through Hole Resistors |
| RoHS | Y | Y | - |
| Product | Power Diodes | Power Resistors Wirewound Molded | - |
| Mounting Style | Through Hole | PCB Mount | - |
| Package / Case | TO-220F-2 | - | - |
| Peak Reverse Voltage | 800 V | - | - |
| Max Surge Current | 180 A | - | - |
| If Forward Current | 10 A | - | - |
| Configuration | Single | - | - |
| Vf Forward Voltage | 1.3 V at 10 A | - | - |
| Ir Reverse Current | 10 uA | - | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Packaging | Tube | Reel | Cut Tape (CT) Alternate Packaging |
| Frequency Range | 50 Hz to 60 Hz | - | - |
| Brand | WeEn Semiconductors | Ohmite | - |
| Maximum Diode Capacitance | 10 pF | - | - |
| Product Type | Diodes - General Purpose, Power, Switching | Wirewound Resistors | - |
| Factory Pack Quantity | 1000 | 500 | - |
| Subcategory | Diodes & Rectifiers | Resistors | - |
| Part # Aliases | 934072116127 | - | - |
| Series | - | WH/WN | WN |
| Resistance | - | 100 Ohms | - |
| Power Rating | - | 3 W | - |
| Tolerance | - | 1 % | ±1% |
| Temperature Coefficient | - | 20 PPM / C | ±50ppm/°C |
| Diameter | - | 5.5 mm | - |
| Length | - | 13.54 mm | - |
| Termination Style | - | Axial | - |
| Features | - | - | Non-Inductive |
| Operating Temperature Range | - | - 55 C to + 150 C | - |
| Technology | - | Wirewound | - |
| Type | - | Miniature Molded Wirewound | - |
| Lead Diameter | - | 0.8 mm | - |
| Unit Weight | - | 0.040918 oz | - |
| Height | - | - | - |
| Operating Temperature | - | - | -55°C ~ 150°C |
| Size Dimension | - | - | 0.217" Dia x 0.533" L (5.50mm x 13.54mm) |
| Supplier Device Package | - | - | Axial |
| Number of Terminations | - | - | 2 |
| Composition | - | - | Wirewound |
| Failure Rate | - | - | - |
| Resistance Ohms | - | - | 10 |
| Package Case | - | - | Axial |
| Power Watts | - | - | 3W |
| Fabricante | Parte # | Descripción | RFQ |
|---|---|---|---|
WeEn Semiconductors |
WND10P08XQ | Diodes - General Purpose, Power, Switching Standard reverse recovery pwr diode | |
Ohmite |
WND1K0FET | Wirewound Resistors - Through Hole 3W 1K ohm 1% | |
| WND100FET | Wirewound Resistors - Through Hole 3W 100 ohm 1% | ||
| WND1K0FET | Wirewound Resistors - Through Hole 3W 1K ohm 1% | ||
| WND15RFET | Wirewound Resistors - Through Hole 3W 15 ohm 1% | ||
| WND100FET | Wirewound Resistors - Through Hole 3W 100 ohm 1% | ||
| WND10RFET | Wirewound Resistors - Through Hole 3W 10 ohm 1% | ||
| WND1R0FET | Wirewound Resistors - Through Hole 3W 1 ohm 1% |