W987D6HBGX6

W987D6HBGX6E vs W987D6HBGX6I vs W987D6HBGX6E TR

 
PartNumberW987D6HBGX6EW987D6HBGX6IW987D6HBGX6E TR
DescriptionDRAM 128M mSDR, x16, 166MHzDRAM 128M mSDR, x16, 166MHz, Ind TempDRAM 128M mSDR, x16, 166MHz T&R
ManufacturerWinbondWinbondWinbond
Product CategoryDRAMDRAMDRAM
TypeSDRAM Mobile - LPSDRSDRAM Mobile - LPSDRSDRAM Mobile - LPSDR
Data Bus Width16 bit16 bit16 bit
Organization8 M x 168 M x 168 M x 16
Package / CaseVFBGA-54VFBGA-54VFBGA-54
Memory Size128 Mbit128 Mbit128 Mbit
Maximum Clock Frequency166 MHz166 MHz166 MHz
Access Time6 ns6 ns6 ns
Supply Voltage Max1.95 V1.95 V1.95 V
Supply Voltage Min1.7 V1.7 V1.7 V
Supply Current Max75 mA75 mA75 mA
Minimum Operating Temperature- 25 C- 40 C- 25 C
Maximum Operating Temperature+ 85 C+ 85 C+ 85 C
SeriesW987D6HBW987D6HBW987D6HB
PackagingTrayTrayReel
BrandWinbondWinbondWinbond
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Product TypeDRAMDRAMDRAM
Factory Pack Quantity3123122500
SubcategoryMemory & Data StorageMemory & Data StorageMemory & Data Storage
Fabricante Parte # Descripción RFQ
Winbond
Winbond
W987D6HBGX6E DRAM 128M mSDR, x16, 166MHz
W987D6HBGX6I DRAM 128M mSDR, x16, 166MHz, Ind Temp
W987D6HBGX6I TR DRAM 128M mSDR, x16, 166MHz, Ind Temp T&R
W987D6HBGX6E TR DRAM 128M mSDR, x16, 166MHz T&R
W987D6HBGX6E TR IC DRAM 128M PARALLEL 54VFBGA
W987D6HBGX6I TR IC DRAM 128M PARALLEL 54VFBGA
W987D6HBGX6E IC DRAM 128M PARALLEL 54VFBGA
W987D6HBGX6I IC DRAM 128M PARALLEL 54VFBGA
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