W987D2HBJX6

W987D2HBJX6I vs W987D2HBJX6E vs W987D2HBJX6E TR

 
PartNumberW987D2HBJX6IW987D2HBJX6EW987D2HBJX6E TR
DescriptionDRAM 128M mSDR, x32, 166MHz, Ind TempDRAM 128M mSDR, x32, 166MHzDRAM 128M mSDR, x32, 166MHz T&R
ManufacturerWinbondWinbondWinbond
Product CategoryDRAMDRAMDRAM
TypeSDRAM Mobile - LPSDRSDRAM Mobile - LPSDRSDRAM Mobile - LPSDR
Data Bus Width32 bit32 bit32 bit
Organization4 M x 324 M x 324 M x 32
Package / CaseVFBGA-90VFBGA-90VFBGA-90
Memory Size128 Mbit128 Mbit128 Mbit
Maximum Clock Frequency166 MHz166 MHz166 MHz
Access Time6 ns6 ns6 ns
Supply Voltage Max1.95 V1.95 V1.95 V
Supply Voltage Min1.7 V1.7 V1.7 V
Supply Current Max75 mA75 mA75 mA
Minimum Operating Temperature- 40 C- 25 C- 25 C
Maximum Operating Temperature+ 85 C+ 85 C+ 85 C
SeriesW987D2HBW987D2HBW987D2HB
PackagingTrayTrayReel
BrandWinbondWinbondWinbond
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Product TypeDRAMDRAMDRAM
Factory Pack Quantity2402402500
SubcategoryMemory & Data StorageMemory & Data StorageMemory & Data Storage
Fabricante Parte # Descripción RFQ
Winbond
Winbond
W987D2HBJX6I DRAM 128M mSDR, x32, 166MHz, Ind Temp
W987D2HBJX6E DRAM 128M mSDR, x32, 166MHz
W987D2HBJX6I TR DRAM 128M mSDR, x32, 166MHz, Ind Temp T&R
W987D2HBJX6E TR DRAM 128M mSDR, x32, 166MHz T&R
W987D2HBJX6I IC DRAM 128M PARALLEL 90VFBGA
W987D2HBJX6E TR IC DRAM 128M PARALLEL 90VFBGA
W987D2HBJX6E IC DRAM 128M PARALLEL 90VFBGA
W987D2HBJX6I TR IC DRAM 128M PARALLEL 90VFBGA
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