PartNumber | VT6T12T2R | VT6T12 | VT6T12 T2R |
Description | Bipolar Transistors - BJT PNP+PNP -50VCEO-0.1A VMT6 | ||
Manufacturer | ROHM Semiconductor | - | - |
Product Category | Bipolar Transistors - BJT | - | - |
RoHS | Y | - | - |
Technology | Si | - | - |
Mounting Style | SMD/SMT | - | - |
Package / Case | VMT-6 | - | - |
Transistor Polarity | PNP | - | - |
Configuration | Dual | - | - |
Collector Emitter Voltage VCEO Max | - 50 V | - | - |
Collector Base Voltage VCBO | - 50 V | - | - |
Emitter Base Voltage VEBO | - 5 V | - | - |
Collector Emitter Saturation Voltage | - 0.15 V | - | - |
Maximum DC Collector Current | - 100 mA | - | - |
Gain Bandwidth Product fT | 300 MHz | - | - |
Minimum Operating Temperature | - 55 C | - | - |
Maximum Operating Temperature | + 150 C | - | - |
DC Current Gain hFE Max | 1.1 | - | - |
Packaging | Reel | - | - |
Brand | ROHM Semiconductor | - | - |
Continuous Collector Current | - 100 mA | - | - |
DC Collector/Base Gain hfe Min | 0.9 | - | - |
Pd Power Dissipation | 150 mW | - | - |
Product Type | BJTs - Bipolar Transistors | - | - |
Factory Pack Quantity | 8000 | - | - |
Subcategory | Transistors | - | - |
Part # Aliases | VT6T12 | - | - |