VS-GT4

VS-GT400TH60N vs VS-GT400TH120N vs VS-GT400TH120U

 
PartNumberVS-GT400TH60NVS-GT400TH120NVS-GT400TH120U
DescriptionIGBT Modules Output & SW Modules - DIAP IGBTIGBT Modules Output & SW Modules - DIAP IGBTIGBT 1200V 750A 2344W DIAP
ManufacturerVishayVishay-
Product CategoryIGBT ModulesIGBT Modules-
ConfigurationHalf BridgeHalf Bridge-
Collector Emitter Voltage VCEO Max600 V1.2 kV-
Collector Emitter Saturation Voltage1.6 V1.7 V-
Continuous Collector Current at 25 C530 A600 A-
Gate Emitter Leakage Current400 nA400 nA-
Pd Power Dissipation1.6 kW2.119 kW-
Package / CaseINT-A-PAKINT-A-PAK-
Maximum Operating Temperature+ 175 C+ 150 C-
BrandVishay SemiconductorsVishay Semiconductors-
Mounting StyleChassis MountChassis Mount-
Maximum Gate Emitter Voltage20 V20 V-
Product TypeIGBT ModulesIGBT Modules-
Factory Pack Quantity12--
SubcategoryIGBTsIGBTs-
Fabricante Parte # Descripción RFQ
Vishay Semiconductors
Vishay Semiconductors
VS-GT400TH60N IGBT Modules Output & SW Modules - DIAP IGBT
VS-GT400TH120N IGBT Modules Output & SW Modules - DIAP IGBT
Vishay
Vishay
VS-GT400TH120N IGBT 1200V 600A 2119W DIAP
VS-GT400TH120U IGBT 1200V 750A 2344W DIAP
VS-GT400TH60N IGBT 600V 530A 1600W DIAP
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