 | | | |
| PartNumber | VS-GB200TH120U | VS-GB200TS60NPBF | VS-GB200TH120N |
| Description | IGBT Modules Output & SW Modules - DIAP IGBT | IGBT Modules 209 Amp 600 Volt Half-Bridge | IGBT Modules Output & SW Modules - DIAP IGBT |
| Manufacturer | Vishay | Vishay | Vishay |
| Product Category | IGBT Modules | IGBT Modules | IGBT Modules |
| Configuration | Half Bridge | Dual | Half Bridge |
| Collector Emitter Voltage VCEO Max | 1.2 kV | 600 V | 1.2 kV |
| Collector Emitter Saturation Voltage | 3.1 V | - | 1.9 V |
| Continuous Collector Current at 25 C | 330 A | 209 A | 360 A |
| Gate Emitter Leakage Current | 400 nA | - | 400 nA |
| Pd Power Dissipation | 1.316 kW | - | 1.136 kW |
| Package / Case | INT-A-PAK | INT-A-PAK | INT-A-PAK |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Brand | Vishay Semiconductors | Vishay Semiconductors | Vishay Semiconductors |
| Mounting Style | Chassis Mount | Chassis Mount | Chassis Mount |
| Maximum Gate Emitter Voltage | 20 V | 20 V | 20 V |
| Product Type | IGBT Modules | IGBT Modules | IGBT Modules |
| Factory Pack Quantity | 12 | 15 | 12 |
| Subcategory | IGBTs | IGBTs | IGBTs |
| RoHS | - | Y | - |
| Product | - | IGBT Silicon Modules | - |
| Minimum Operating Temperature | - | - 40 C | - |
| Packaging | - | Bulk | - |
| Height | - | 30 mm | - |
| Length | - | 94 mm | - |
| Series | - | GB200TS60 | - |
| Width | - | 35 mm | - |
| Tradename | - | HEXFRED | - |
| Part # Aliases | - | GB200TS60NPBF | - |
| Unit Weight | - | 7.054792 oz | - |
| Fabricante | Parte # | Descripción | RFQ |
|---|---|---|---|
Vishay Semiconductors |
VS-GB200TH120U | IGBT Modules Output & SW Modules - DIAP IGBT | |
| VS-GB200TS60NPBF | IGBT Modules 209 Amp 600 Volt Half-Bridge | ||
| VS-GB200TH120N | IGBT Modules Output & SW Modules - DIAP IGBT | ||
Vishay |
VS-GB200TH120N | IGBT 1200V 360A 1136W INT-A-PAK | |
| VS-GB200TH120U | IGBT 1200V 330A 1316W INT-A-PAK | ||
| VS-GB200TS60NPBF | IGBT Modules 209 Amp 600 Volt Half-Bridge |