PartNumber | VS-GB200TH120U | VS-GB200NH120N | VS-GB200TH120N |
Description | IGBT Modules Output & SW Modules - DIAP IGBT | IGBT Modules Output & SW Modules - DIAP IGBT | IGBT Modules Output & SW Modules - DIAP IGBT |
Manufacturer | Vishay | Vishay | Vishay |
Product Category | IGBT Modules | IGBT Modules | IGBT Modules |
Configuration | Half Bridge | - | Half Bridge |
Collector Emitter Voltage VCEO Max | 1.2 kV | 1.2 kV | 1.2 kV |
Collector Emitter Saturation Voltage | 3.1 V | 1.8 V | 1.9 V |
Continuous Collector Current at 25 C | 330 A | 420 A | 360 A |
Gate Emitter Leakage Current | 400 nA | 400 nA | 400 nA |
Pd Power Dissipation | 1.316 kW | 1.562 kW | 1.136 kW |
Package / Case | INT-A-PAK | INT-A-PAK | INT-A-PAK |
Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
Brand | Vishay Semiconductors | Vishay Semiconductors | Vishay Semiconductors |
Mounting Style | Chassis Mount | Chassis Mount | Chassis Mount |
Maximum Gate Emitter Voltage | 20 V | 20 V | 20 V |
Product Type | IGBT Modules | IGBT Modules | IGBT Modules |
Factory Pack Quantity | 12 | 12 | 12 |
Subcategory | IGBTs | IGBTs | IGBTs |
Minimum Operating Temperature | - | - 40 C | - |