VQ2001P

VQ2001P vs VQ2001P-2 vs VQ2001P-2(VQ2001P)

 
PartNumberVQ2001PVQ2001P-2VQ2001P-2(VQ2001P)
DescriptionMOSFET Quad 30V 0.6AMOSFET 4P-CH 30V 0.6A 14DIP
ManufacturerVishayVishay SiliconixSIL
Product CategoryMOSFETFETs - ArraysIC Chips
RoHSN--
TechnologySiSi-
PackagingTubeTube-
BrandVishay / Siliconix--
Product TypeMOSFET--
Factory Pack Quantity25--
SubcategoryMOSFETs--
Unit Weight0.042329 oz0.042329 oz-
Series---
Mounting Style-Through Hole-
Package Case-14-DIP-
Operating Temperature--55°C ~ 150°C (TJ)-
Mounting Type-Through Hole-
Number of Channels-4 Channel-
Supplier Device Package-14-DIP-
Configuration-Quad-
FET Type-4 P-Channel-
Power Max-2W-
Transistor Type-4 P-Channel-
Drain to Source Voltage Vdss-30V-
Input Capacitance Ciss Vds-150pF @ 15V-
FET Feature-Standard-
Current Continuous Drain Id 25°C-600mA-
Rds On Max Id Vgs-2 Ohm @ 1A, 12V-
Vgs th Max Id-4.5V @ 1mA-
Gate Charge Qg Vgs---
Pd Power Dissipation-2 W-
Maximum Operating Temperature-+ 150 C-
Minimum Operating Temperature-- 55 C-
Vgs Gate Source Voltage-20 V-
Id Continuous Drain Current-600 mA-
Vds Drain Source Breakdown Voltage-- 30 V-
Rds On Drain Source Resistance-2 Ohms-
Transistor Polarity-P-Channel-
Channel Mode-Enhancement-
Fabricante Parte # Descripción RFQ
Vishay / Siliconix
Vishay / Siliconix
VQ2001P MOSFET Quad 30V 0.6A
Vishay
Vishay
VQ2001P-2 MOSFET 4P-CH 30V 0.6A 14DIP
VQ2001P RF Bipolar Transistors MOSFET Quad 30V 0.6A
VQ2001P-2(VQ2001P) Nuevo y original
VQ2001P-7 Nuevo y original
VQ2001P-E3 Trans MOSFET P-CH 30V 0.6A 14-Pin PDIP - Bulk (Alt: VQ2001P-E3)
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