VP0104N

VP0104N3-G P002 vs VP0104N3-G vs VP0104N3-G P003

 
PartNumberVP0104N3-G P002VP0104N3-GVP0104N3-G P003
DescriptionMOSFET N-CH Enhancmnt Mode MOSFETMOSFET 40V 8OhmMOSFET N-CH Enhancmnt Mode MOSFET
ManufacturerMicrochipMicrochipMicrochip
Product CategoryMOSFETMOSFETMOSFET
RoHSYYY
TechnologySiSiSi
Mounting StyleThrough HoleThrough HoleThrough Hole
Package / CaseTO-92-3TO-92-3TO-92-3
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityP-ChannelP-ChannelP-Channel
Vds Drain Source Breakdown Voltage40 V40 V40 V
Id Continuous Drain Current250 mA250 mA250 mA
Rds On Drain Source Resistance15 Ohms8 Ohms15 Ohms
Vgs Gate Source Voltage20 V10 V20 V
Minimum Operating Temperature- 55 C- 55 C- 55 C
Maximum Operating Temperature+ 150 C+ 150 C+ 150 C
Pd Power Dissipation1 W1 W1 W
ConfigurationSingleSingleSingle
Channel ModeEnhancementEnhancementEnhancement
PackagingReelBulkReel
ProductMOSFET Small Signal-MOSFET Small Signal
Transistor Type1 P-Channel1 P-Channel1 P-Channel
BrandMicrochip TechnologyMicrochip TechnologyMicrochip Technology
Fall Time4 ns4 ns4 ns
Product TypeMOSFETMOSFETMOSFET
Rise Time3 ns3 ns3 ns
Factory Pack Quantity200010002000
SubcategoryMOSFETsMOSFETsMOSFETs
Typical Turn Off Delay Time8 ns8 ns8 ns
Typical Turn On Delay Time4 ns4 ns4 ns
Unit Weight0.016000 oz0.016000 oz0.016000 oz
Vgs th Gate Source Threshold Voltage-1.5 V-
Height-5.33 mm-
Length-5.21 mm-
Type-FET-
Width-4.19 mm-
Forward Transconductance Min-150 mS-
Fabricante Parte # Descripción RFQ
Microchip Technology
Microchip Technology
VP0104N3-G P002 MOSFET N-CH Enhancmnt Mode MOSFET
VP0104N3-G MOSFET 40V 8Ohm
VP0104N3-G P014 MOSFET N-CH Enhancmnt Mode MOSFET
VP0104N3-G P003 MOSFET N-CH Enhancmnt Mode MOSFET
VP0104N2 450 mA, 40 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-39
VP0104N3 MOSFET 40V 8Ohm
VP0104N3-G MOSFET P-CH 40V 0.25A TO92-3
VP0104N5 Nuevo y original
VP0104N6 Nuevo y original
VP0104N7 MOSFET Transistor, Array, P-Channel, DIP
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