UPA800T

UPA800T-A vs UPA800T-T1 vs UPA800T-T1-A

 
PartNumberUPA800T-AUPA800T-T1UPA800T-T1-A
DescriptionRF Bipolar Transistors NPN Silicn AMP Oscilltr Twn TrnstRF TRANS 2 NPN 10V 8GHZ 6SORF Bipolar Transistors NPN Silicn AMP Oscilltr Twn Trnst
ManufacturerCELNECCEL
Product CategoryRF Bipolar TransistorsRF Transistors (BJT)RF Transistors (BJT)
RoHSY--
Transistor TypeBipolar2 NPN (Dual)2 NPN (Dual)
TechnologySi-Si
Transistor PolarityNPN-NPN
Emitter Base Voltage VEBO1.5 V--
Continuous Collector Current0.035 A-0.035 A
Minimum Operating Temperature- 65 C-- 65 C
Maximum Operating Temperature+ 150 C-+ 150 C
ConfigurationSingle-Single
Collector Base Voltage VCBO20 V--
DC Current Gain hFE Max80 at 5 mA at 3 V--
Operating Frequency8000 MHz (Typ)-8000 MHz (Typ)
TypeRF Bipolar Small Signal--
BrandCEL--
Pd Power Dissipation200 mW--
Product TypeRF Bipolar Transistors--
Factory Pack Quantity1--
SubcategoryTransistors--
Series---
Packaging-Cut Tape (CT)Digi-ReelR Alternate Packaging
Package Case-6-TSSOP, SC-88, SOT-3636-TSSOP, SC-88, SOT-363
Mounting Type-Surface MountSurface Mount
Supplier Device Package-6-SOSOT-363
Power Max-200mW200mW
Current Collector Ic Max-35mA35mA
Voltage Collector Emitter Breakdown Max-10V10V
DC Current Gain hFE Min Ic Vce-80 @ 5mA, 3V80 @ 5mA, 3V
Frequency Transition-8GHz8GHz
Noise Figure dB Typ f-1.9dB ~ 3.2dB @ 2GHz1.9dB @ 2GHz
Gain--7.5dB
Pd Power Dissipation--200 mW
Emitter Base Voltage VEBO--1.5 V
Fabricante Parte # Descripción RFQ
CEL
CEL
UPA800T-A RF Bipolar Transistors NPN Silicn AMP Oscilltr Twn Trnst
UPA800T-T1 RF TRANS 2 NPN 10V 8GHZ 6SO
UPA800T-A RF Bipolar Transistors NPN Silicn AMP Oscilltr Twn Trnst
UPA800T-T1-A RF Bipolar Transistors NPN Silicn AMP Oscilltr Twn Trnst
UPA800T Nuevo y original
UPA800T , MAX6757UTZD0 Nuevo y original
UPA800T-T1. Nuevo y original
UPA800T-T1/RL Nuevo y original
UPA800T-AKB(T1-A) Unclassified
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