 | | | |
| PartNumber | TTC012(Q) | TTC012(Q)-ND | TTC012 |
| Description | Bipolar Transistors - BJT NPN PWR Amp Trans 2A IC 3A ICP 800V | ||
| Manufacturer | Toshiba | - | Toshiba |
| Product Category | Bipolar Transistors - BJT | - | Transistors - Bipolar (BJT) - RF |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | Through Hole | - | - |
| Transistor Polarity | NPN | - | NPN |
| Configuration | Single | - | - |
| Collector Emitter Voltage VCEO Max | 375 V | - | - |
| Collector Base Voltage VCBO | 800 V | - | - |
| Emitter Base Voltage VEBO | 8 V | - | - |
| Collector Emitter Saturation Voltage | 500 mV | - | - |
| Maximum DC Collector Current | 2 A | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Series | TTC012 | - | - |
| DC Current Gain hFE Max | 250 at 1 mA, 5 V | - | - |
| Packaging | Bulk | - | Bulk |
| Brand | Toshiba | - | - |
| DC Collector/Base Gain hfe Min | 80 at 1 mA, 5 V | - | - |
| Pd Power Dissipation | 1.1 W | - | - |
| Product Type | BJTs - Bipolar Transistors | - | - |
| Factory Pack Quantity | 200 | - | - |
| Subcategory | Transistors | - | - |
| Fabricante | Parte # | Descripción | RFQ |
|---|---|---|---|
Toshiba |
TTC012(Q) | Bipolar Transistors - BJT NPN PWR Amp Trans 2A IC 3A ICP 800V | |
| TTC012(Q)-ND | Nuevo y original | ||
| TTC012(Q) | Bipolar Transistors - BJT NPN PWR Amp Trans 2A IC 3A ICP 800V | ||
| TTC012 | Nuevo y original |