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| PartNumber | TSM9N90ECI C0G | TSM9N90CI C0G | TSM9N90CZ C0 |
| Description | MOSFET 900V 9Amp 1.4 N channel Mosfet | MOSFET 900V 9A N Channel Power Mosfet | MOSFET 900V 9A N Channel Mosfet |
| Manufacturer | Taiwan Semiconductor | Taiwan Semiconductor | Taiwan Semiconductor |
| Product Category | MOSFET | Transistors - FETs, MOSFETs - Single | Transistors - FETs, MOSFETs - Single |
| RoHS | Y | - | - |
| Technology | Si | Si | Si |
| Mounting Style | Through Hole | Through Hole | Through Hole |
| Package / Case | ITO-220-3 | - | - |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 900 V | - | - |
| Id Continuous Drain Current | 9 A | - | - |
| Rds On Drain Source Resistance | 1.13 Ohms | - | - |
| Vgs th Gate Source Threshold Voltage | 2 V | - | - |
| Vgs Gate Source Voltage | 10 V | - | - |
| Qg Gate Charge | 72 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 89 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Tube | Tube | Tube |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Brand | Taiwan Semiconductor | - | - |
| Fall Time | 159 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 97 ns | - | - |
| Factory Pack Quantity | 2000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 212 ns | - | - |
| Typical Turn On Delay Time | 52 ns | - | - |
| Unit Weight | 0.059966 oz | 0.211644 oz | 0.211644 oz |
| Package Case | - | TO-220-3 | TO-220-3 |
| Id Continuous Drain Current | - | 9 A | 9 A |
| Vds Drain Source Breakdown Voltage | - | 900 V | 900 V |
| Rds On Drain Source Resistance | - | 1.4 Ohms | 1.4 Ohms |