PartNumber | TSM80N1R2CI C0G | TSM80N1R2CL C0G | TSM80N1R2CH C5G |
Description | MOSFET 800V, 5.5A, Single N Channel Power MOSFET | MOSFET 800V N channel Power Mosfet 5.5A, 1,2ohm | MOSFET Power MOSFET, N-CHAN 800V, 5.5A, 1200mOhm |
Manufacturer | Taiwan Semiconductor | Taiwan Semiconductor | Taiwan Semiconductor |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Mounting Style | Through Hole | Through Hole | Through Hole |
Package / Case | TO-220-3 | TO-262-3 | TO-251-3 |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 800 V | 800 V | 800 V |
Id Continuous Drain Current | 5.5 A | 5.5 A | 5.5 A |
Rds On Drain Source Resistance | 900 mOhms | 900 mOhms | 900 mOhms |
Vgs th Gate Source Threshold Voltage | 2 V | 2 V | 2 V |
Vgs Gate Source Voltage | 10 V | 10 V | 10 V |
Qg Gate Charge | 19.4 nC | 19.4 nC | 19.4 nC |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
Pd Power Dissipation | 25 W | 110 W | 110 W |
Configuration | Single | Single | Single |
Channel Mode | Enhancement | Enhancement | Enhancement |
Packaging | Tube | Tube | Tube |
Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
Brand | Taiwan Semiconductor | Taiwan Semiconductor | Taiwan Semiconductor |
Fall Time | 10 ns | 10 ns | 10 ns |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 11 ns | 11 ns | 11 ns |
Factory Pack Quantity | 2000 | 2000 | 3750 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 55 ns | 55 ns | 55 ns |
Typical Turn On Delay Time | 22 ns | 22 ns | 22 ns |
Unit Weight | 0.063493 oz | - | - |
Product | - | - | Rectifiers |