TSM80N1

TSM80N1R2CI C0G vs TSM80N1R2CL C0G vs TSM80N1R2CH C5G

 
PartNumberTSM80N1R2CI C0GTSM80N1R2CL C0GTSM80N1R2CH C5G
DescriptionMOSFET 800V, 5.5A, Single N Channel Power MOSFETMOSFET 800V N channel Power Mosfet 5.5A, 1,2ohmMOSFET Power MOSFET, N-CHAN 800V, 5.5A, 1200mOhm
ManufacturerTaiwan SemiconductorTaiwan SemiconductorTaiwan Semiconductor
Product CategoryMOSFETMOSFETMOSFET
RoHSYYY
TechnologySiSiSi
Mounting StyleThrough HoleThrough HoleThrough Hole
Package / CaseTO-220-3TO-262-3TO-251-3
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage800 V800 V800 V
Id Continuous Drain Current5.5 A5.5 A5.5 A
Rds On Drain Source Resistance900 mOhms900 mOhms900 mOhms
Vgs th Gate Source Threshold Voltage2 V2 V2 V
Vgs Gate Source Voltage10 V10 V10 V
Qg Gate Charge19.4 nC19.4 nC19.4 nC
Minimum Operating Temperature- 55 C- 55 C- 55 C
Maximum Operating Temperature+ 150 C+ 150 C+ 150 C
Pd Power Dissipation25 W110 W110 W
ConfigurationSingleSingleSingle
Channel ModeEnhancementEnhancementEnhancement
PackagingTubeTubeTube
Transistor Type1 N-Channel1 N-Channel1 N-Channel
BrandTaiwan SemiconductorTaiwan SemiconductorTaiwan Semiconductor
Fall Time10 ns10 ns10 ns
Product TypeMOSFETMOSFETMOSFET
Rise Time11 ns11 ns11 ns
Factory Pack Quantity200020003750
SubcategoryMOSFETsMOSFETsMOSFETs
Typical Turn Off Delay Time55 ns55 ns55 ns
Typical Turn On Delay Time22 ns22 ns22 ns
Unit Weight0.063493 oz--
Product--Rectifiers
Fabricante Parte # Descripción RFQ
Taiwan Semiconductor
Taiwan Semiconductor
TSM80N1R2CI C0G MOSFET 800V, 5.5A, Single N Channel Power MOSFET
TSM80N1R2CP ROG MOSFET Power MOSFET, N-CHAN 800V, 5.5A, 1200mOhm
TSM80N1R2CL C0G MOSFET 800V N channel Power Mosfet 5.5A, 1,2ohm
TSM80N1R2CH C5G MOSFET Power MOSFET, N-CHAN 800V, 5.5A, 1200mOhm
TSM80N1R2CL C0G 800V N CHANNEL POWER MOSFET 5.
TSM80N1R2CH C5G N-Ch 800V 5,5A 110W 1,2R TO251
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