TSM6963S

TSM6963SDCA RVG vs TSM6963SDCA RV vs TSM6963SDCARV

 
PartNumberTSM6963SDCA RVGTSM6963SDCA RVTSM6963SDCARV
DescriptionMOSFET Dual 20V N Channel MosfetPower Field-Effect Transistor, 4.5A I(D), 20V, 0.03ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
ManufacturerTaiwan Semiconductor--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseTSSOP-8--
Number of Channels2 Channel--
Transistor PolarityP-Channel--
Vds Drain Source Breakdown Voltage20 V--
Id Continuous Drain Current4.5 A--
Rds On Drain Source Resistance23 mOhms--
Vgs th Gate Source Threshold Voltage500 mV--
Vgs Gate Source Voltage4.5 V--
Qg Gate Charge14 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation1.14 W--
ConfigurationDual--
Channel ModeEnhancement--
PackagingReel--
Transistor Type2 P-Channel--
BrandTaiwan Semiconductor--
Forward Transconductance Min16 S--
Fall Time42 ns--
Product TypeMOSFET--
Rise Time13 ns--
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time86 ns--
Typical Turn On Delay Time6 ns--
Unit Weight0.005573 oz--
Fabricante Parte # Descripción RFQ
Taiwan Semiconductor
Taiwan Semiconductor
TSM6963SDCA RVG MOSFET Dual 20V N Channel Mosfet
TSM6963SDCA RVG MOSFET Dual 20V N Channel Mosfet
TSM6963SDCA RV Nuevo y original
TSM6963SDCARV Power Field-Effect Transistor, 4.5A I(D), 20V, 0.03ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
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