TSM60NB3

TSM60NB380CP ROG vs TSM60NB380CH C5G vs TSM60NB380CF C0G

 
PartNumberTSM60NB380CP ROGTSM60NB380CH C5GTSM60NB380CF C0G
DescriptionMOSFET 600V 9.5A 0.38OHMS N Channel Power MosfetMOSFET 600V, 9,5A, 0,38OHMS N channel MosfetMOSFET 600V, 11A, 0.38OHMS Sng N-Channel MOSFET
ManufacturerTaiwan SemiconductorTaiwan SemiconductorTaiwan Semiconductor
Product CategoryMOSFETMOSFETMOSFET
RoHSYYY
TechnologySiSiSi
Mounting StyleSMD/SMTThrough HoleThrough Hole
Package / CaseTO-252-3TO-251-3ITO-220S-3
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage600 V600 V600 V
Id Continuous Drain Current9.5 A9.5 A11 A
Rds On Drain Source Resistance260 mOhms260 mOhms280 mOhms
Vgs th Gate Source Threshold Voltage2 V2 V2 V
Vgs Gate Source Voltage30 V30 V30 V
Qg Gate Charge19.4 nC19.4 nC21 nC
Minimum Operating Temperature- 55 C- 55 C- 55 C
Maximum Operating Temperature+ 150 C+ 150 C+ 150 C
Pd Power Dissipation83 W83 W62.5 W
ConfigurationSingleSingleSingle
Channel ModeEnhancementEnhancementEnhancement
PackagingReelTubeTube
Transistor Type1 N-Channel1 N-Channel1 N-Channel
BrandTaiwan SemiconductorTaiwan SemiconductorTaiwan Semiconductor
Fall Time9.6 ns9.6 ns20 ns
Product TypeMOSFETMOSFETMOSFET
Rise Time11.6 ns11.6 ns20 ns
Factory Pack Quantity250037502000
SubcategoryMOSFETsMOSFETsMOSFETs
Typical Turn Off Delay Time66 ns66 ns21 ns
Typical Turn On Delay Time23.6 ns23.6 ns9 ns
Unit Weight0.011993 oz0.011993 oz0.059966 oz
Fabricante Parte # Descripción RFQ
Taiwan Semiconductor
Taiwan Semiconductor
TSM60NB380CP ROG MOSFET 600V 9.5A 0.38OHMS N Channel Power Mosfet
TSM60NB380CH C5G MOSFET 600V, 9,5A, 0,38OHMS N channel Mosfet
TSM60NB380CF C0G MOSFET 600V, 11A, 0.38OHMS Sng N-Channel MOSFET
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