TSM60NB19 stock, TSM60NB19, TSM60NB190CZ C0G


PartNumber	TSM60NB190CM2 RNG	TSM60NB190CF C0G	TSM60NB190CI C0G
Description	MOSFET 600V, 18A, 0.19 N Channel Power Mosfet	MOSFET MOSFET, Single, N-Ch SJ, 600V, 18A	MOSFET 600V, 18A, Single N- N-Chan Power MOSFET
Manufacturer	Taiwan Semiconductor	Taiwan Semiconductor	Taiwan Semiconductor
Product Category	MOSFET	MOSFET	MOSFET
RoHS	Y	Y	Y
Technology	Si	Si	Si
Mounting Style	SMD/SMT	-	Through Hole
Package / Case	TO-263-3	-	ITO-220-3
Number of Channels	1 Channel	1 Channel	1 Channel
Transistor Polarity	N-Channel	N-Channel	N-Channel
Vds Drain Source Breakdown Voltage	600 V	600 V	600 V
Id Continuous Drain Current	18 A	18 A	18 A
Rds On Drain Source Resistance	170 mOhms	170 mOhms	190 mOhms
Vgs th Gate Source Threshold Voltage	2 V	2 V	2 V
Vgs Gate Source Voltage	10 V	10 V	10 V
Qg Gate Charge	31 nC	32 nC	31 nC
Minimum Operating Temperature	- 55 C	- 55 C	- 55 C
Maximum Operating Temperature	+ 150 C	+ 150 C	+ 150 C
Pd Power Dissipation	150.6 W	59.5 W	33.8 W
Configuration	Single	Single	Single
Channel Mode	Enhancement	Enhancement	Enhancement
Packaging	Reel	Tube	Tube
Transistor Type	1 N-Channel	N-Channel Power MOSFET	1 N-Channel
Brand	Taiwan Semiconductor	Taiwan Semiconductor	Taiwan Semiconductor
Fall Time	21 ns	17 ns	21 ns
Product Type	MOSFET	MOSFET	MOSFET
Rise Time	21 ns	34 ns	21 ns
Factory Pack Quantity	800	2000	2000
Subcategory	MOSFETs	MOSFETs	MOSFETs
Typical Turn Off Delay Time	95 ns	26 ns	95 ns
Typical Turn On Delay Time	36 ns	11 ns	36 ns
Unit Weight	0.077603 oz	-	-

Search Part Number : "TSM60NB19", Match & Start with "TSM60NB19" - Total : 4

Fabricante	Parte #	Descripción
Taiwan Semiconductor	TSM60NB190CZ C0G	MOSFET 600V, 18A, Single N- Channel Power MOSFET
	TSM60NB190CM2 RNG	MOSFET 600V, 18A, 0.19 N Channel Power Mosfet
	TSM60NB190CF C0G	MOSFET MOSFET, Single, N-Ch SJ, 600V, 18A
	TSM60NB190CI C0G	MOSFET 600V, 18A, Single N- N-Chan Power MOSFET

TSM60NB19