TSM60N9

TSM60N900CI vs TSM60N900CP vs TSM60N900CH

 
PartNumberTSM60N900CITSM60N900CPTSM60N900CH
DescriptionMOSFET Power MOSFET, N-CHAN 600V, 4.5A, 900mOhmMOSFET Power MOSFET, N-CHAN 600V, 4.5A, 900mOhmMOSFET Power MOSFET, N-CHAN 600V, 4.5A, 900mOhm
ManufacturerTaiwan SemiconductorTaiwan SemiconductorTaiwan Semiconductor
Product CategoryMOSFETMOSFETMOSFET
RoHSYYY
TechnologySiSiSi
Mounting StyleThrough HoleSMD/SMTThrough Hole
Package / CaseTO-220-3TO-252-3TO-251-3
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage600 V600 V600 V
Id Continuous Drain Current4.5 A4.5 A4.5 A
Rds On Drain Source Resistance720 mOhms720 mOhms720 mOhms
Vgs th Gate Source Threshold Voltage2 V2 V2 V
Vgs Gate Source Voltage30 V10 V10 V
Qg Gate Charge9.7 nC9.7 nC9.7 nC
Minimum Operating Temperature- 55 C- 55 C- 55 C
Maximum Operating Temperature+ 150 C+ 150 C+ 150 C
Pd Power Dissipation20 W50 W50 W
ConfigurationSingleSingleSingle
Channel ModeEnhancementEnhancementEnhancement
PackagingTubeReelTube
Transistor Type1 N-Channel1 N-Channel1 N-Channel
BrandTaiwan SemiconductorTaiwan SemiconductorTaiwan Semiconductor
Fall Time12 ns12 ns12 ns
Product TypeMOSFETMOSFETMOSFET
Rise Time16 ns16 ns16 ns
Factory Pack Quantity100025001875
SubcategoryMOSFETsMOSFETsMOSFETs
Typical Turn Off Delay Time22 ns22 ns22 ns
Typical Turn On Delay Time12 ns12 ns12 ns
Part # AliasesC0G TSM60N900CIROG TSM60N900CPC5G TSM60N900CH
Unit Weight0.063493 oz0.012346 oz0.139332 oz
Fabricante Parte # Descripción RFQ
Taiwan Semiconductor
Taiwan Semiconductor
TSM60N900CI MOSFET Power MOSFET, N-CHAN 600V, 4.5A, 900mOhm
TSM60N900CP MOSFET Power MOSFET, N-CHAN 600V, 4.5A, 900mOhm
TSM60N900CH MOSFET Power MOSFET, N-CHAN 600V, 4.5A, 900mOhm
TSM60N900CH MOSFET Power MOSFET, N-CHAN 600V, 4.5A, 900mOhm
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