TSM4N9 stock, TSM4N9, TSM4N90CZ C0G


PartNumber	TSM4N90CZ C0G	TSM4N90CI C0G	TSM4N90CZ C0
Description	MOSFET 900V 4Amp N channel Mosfet	MOSFET 900V 4A N Channel Power Mosfet	MOSFET 900V 4A N Channel Mosfet
Manufacturer	Taiwan Semiconductor	Taiwan Semiconductor	Taiwan Semiconductor
Product Category	MOSFET	MOSFET	MOSFET
RoHS	Y	Y	Y
Technology	Si	Si	Si
Mounting Style	Through Hole	Through Hole	Through Hole
Package / Case	TO-220-3	ITO-220-3	TO-220-3
Number of Channels	1 Channel	1 Channel	1 Channel
Transistor Polarity	N-Channel	N-Channel	N-Channel
Vds Drain Source Breakdown Voltage	900 V	900 V	900 V
Id Continuous Drain Current	4 A	4 A	4 A
Rds On Drain Source Resistance	3.2 Ohms	3.2 Ohms	3.2 Ohms
Vgs th Gate Source Threshold Voltage	2 V	2 V	2 V
Vgs Gate Source Voltage	10 V	10 V	10 V
Qg Gate Charge	25 nC	25 nC	25 nC
Minimum Operating Temperature	- 55 C	- 55 C	- 55 C
Maximum Operating Temperature	+ 150 C	+ 150 C	+ 150 C
Pd Power Dissipation	123 W	38.7 W	123 W
Configuration	Single	Single	Single
Channel Mode	Enhancement	Enhancement	Enhancement
Packaging	Tube	Tube	Tube
Transistor Type	1 N-Channel	1 N-Channel	1 N-Channel
Brand	Taiwan Semiconductor	Taiwan Semiconductor	Taiwan Semiconductor
Fall Time	50 ns	50 ns	50 ns
Product Type	MOSFET	MOSFET	MOSFET
Rise Time	38 ns	38 ns	38 ns
Factory Pack Quantity	2000	2000	1000
Subcategory	MOSFETs	MOSFETs	MOSFETs
Typical Turn Off Delay Time	146 ns	146 ns	146 ns
Typical Turn On Delay Time	49 ns	49 ns	49 ns
Unit Weight	0.063493 oz	0.211644 oz	0.211644 oz
Forward Transconductance Min	-	6 S	6 S

Search Part Number : "TSM4N9", Match & Start with "TSM4N9" - Total : 7

Fabricante	Parte #	Descripción
Taiwan Semiconductor	TSM4N90CZ C0G	MOSFET 900V 4Amp N channel Mosfet
	TSM4N90CI C0G	MOSFET 900V 4A N Channel Power Mosfet
	TSM4N90CZ C0	MOSFET 900V 4A N Channel Mosfet
	TSM4N90CI C0G	MOSFET 900V 4A N Channel Power Mosfet
	TSM4N90CZ C0G	MOSFET 900V 4Amp N channel Mosfet
	TSM4N90CZ C0	MOSFET 900V 4A N Channel Mosfet
	TSM4N90CICOG	Power Field-Effect Transisto

TSM4N9