TSM2301C

TSM2301CX RFG vs TSM2301CX vs TSM2301CX RF

 
PartNumberTSM2301CX RFGTSM2301CXTSM2301CX RF
DescriptionMOSFET 20V P channel MosfetIGBT Transistors MOSFET 20V P channel MOSFET
ManufacturerTaiwan SemiconductorTAIWAN SEMICONDUCTOR-
Product CategoryMOSFETIC Chips-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseSOT-23-3--
Number of Channels1 Channel1 Channel-
Transistor PolarityP-ChannelP-Channel-
Vds Drain Source Breakdown Voltage20 V--
Id Continuous Drain Current2.8 A--
Rds On Drain Source Resistance85 mOhms--
Vgs th Gate Source Threshold Voltage450 mV--
Vgs Gate Source Voltage4.5 V--
Qg Gate Charge5.4 nC--
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation900 mW--
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
ProductRectifiers--
Transistor Type1 P-Channel1 P-Channel-
BrandTaiwan Semiconductor--
Forward Transconductance Min6.5 S--
Fall Time65 ns19 ns-
Product TypeMOSFET--
Rise Time19 ns19 ns-
SubcategoryMOSFETs--
Typical Turn Off Delay Time95 ns95 ns-
Typical Turn On Delay Time5 ns5 ns-
Packaging-Reel-
Part Aliases-RF-
Unit Weight-0.050717 oz-
Package Case-SOT-23-3-
Pd Power Dissipation-900 mW-
Vgs Gate Source Voltage-8 V-
Id Continuous Drain Current-- 2.8 A-
Vds Drain Source Breakdown Voltage-- 20 V-
Vgs th Gate Source Threshold Voltage-- 0.95 V-
Rds On Drain Source Resistance-130 mOhms-
Fabricante Parte # Descripción RFQ
Taiwan Semiconductor
Taiwan Semiconductor
TSM2301CX RFG MOSFET 20V P channel Mosfet
TSM2301CX RFG MOSFET P-CHANNEL 20V 2.8A SOT23
TSM2301CX IGBT Transistors MOSFET 20V P channel MOSFET
TSM2301CX RF Nuevo y original
TSM2301CXRF Nuevo y original
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