TSM1NB60CW

TSM1NB60CW RPG vs TSM1NB60CW vs TSM1NB60CWRP

 
PartNumberTSM1NB60CW RPGTSM1NB60CWTSM1NB60CWRP
DescriptionMOSFET 600V 1Amp N channel Mosfet
ManufacturerTaiwan Semiconductor-TSC
Product CategoryMOSFET-IC Chips
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseSOT-223-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage600 V--
Id Continuous Drain Current1 A--
Rds On Drain Source Resistance8 Ohms--
Vgs th Gate Source Threshold Voltage2.5 V--
Vgs Gate Source Voltage10 V--
Qg Gate Charge6.1 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation2.1 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingReel--
Transistor Type1 N-Channel--
BrandTaiwan Semiconductor--
Fall Time14.9 ns--
Moisture SensitiveYes--
Product TypeMOSFET--
Rise Time6.8 ns--
Factory Pack Quantity2500--
SubcategoryMOSFETs--
Typical Turn Off Delay Time15.3 ns--
Typical Turn On Delay Time7.7 ns--
Unit Weight0.009171 oz--
Fabricante Parte # Descripción RFQ
Taiwan Semiconductor
Taiwan Semiconductor
TSM1NB60CW RPG MOSFET 600V 1Amp N channel Mosfet
TSM1NB60CW Nuevo y original
TSM1NB60CWRP Nuevo y original
TSM1NB60CWRPG Nuevo y original
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