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| PartNumber | TSC5802DCH C5G | TSC5802DCP ROG | TSC5802DCH C5GG |
| Description | Bipolar Transistors - BJT TO-251 1050V 2.5A NPN Bplr Trans | Bipolar Transistors - BJT High voltage fast Switching NPN Transistor with diode | Bipolar Transistors - BJT High voltage Fast Switching NPN Transistor with diode |
| Manufacturer | Taiwan Semiconductor | Taiwan Semiconductor | Taiwan Semiconductor |
| Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | Bipolar Transistors - BJT |
| Series | TSC5802DCH | - | - |
| Brand | Taiwan Semiconductor | Taiwan Semiconductor | Taiwan Semiconductor |
| Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors |
| Subcategory | Transistors | Transistors | Transistors |
| RoHS | - | Y | Y |
| Technology | - | Si | - |
| Mounting Style | - | SMD/SMT | - |
| Package / Case | - | TO-252-3 | - |
| Transistor Polarity | - | NPN | - |
| Configuration | - | Single | - |
| Collector Emitter Voltage VCEO Max | - | 450 V | - |
| Collector Base Voltage VCBO | - | 1050 V | - |
| Emitter Base Voltage VEBO | - | 15 V | - |
| Collector Emitter Saturation Voltage | - | 1.5 V | - |
| Maximum DC Collector Current | - | 4 A | - |
| Maximum Operating Temperature | - | + 150 C | - |
| DC Current Gain hFE Max | - | 100 | - |
| Packaging | - | Reel | Reel |
| Continuous Collector Current | - | 2.5 A | - |
| DC Collector/Base Gain hfe Min | - | 18 | - |
| Pd Power Dissipation | - | 30 W | - |
| Factory Pack Quantity | - | 2500 | 1875 |
| Unit Weight | - | 0.011993 oz | - |