PartNumber | TPN5900CNH,L1Q | TPN5441A2ET | TPN5900CNH |
Description | MOSFET UMOSVIII 150V 59mOhm (VGS=10V) TSON-ADV | ||
Manufacturer | Toshiba | - | - |
Product Category | MOSFET | - | - |
RoHS | Y | - | - |
Technology | Si | - | - |
Mounting Style | SMD/SMT | - | - |
Package / Case | TSON-Advance-8 | - | - |
Number of Channels | 1 Channel | - | - |
Transistor Polarity | N-Channel | - | - |
Vds Drain Source Breakdown Voltage | 150 V | - | - |
Id Continuous Drain Current | 18 A | - | - |
Rds On Drain Source Resistance | 50 mOhms | - | - |
Vgs th Gate Source Threshold Voltage | 4 V | - | - |
Vgs Gate Source Voltage | 20 V | - | - |
Qg Gate Charge | 7 nC | - | - |
Minimum Operating Temperature | - 55 C | - | - |
Maximum Operating Temperature | + 150 C | - | - |
Pd Power Dissipation | 39 W | - | - |
Configuration | Triple | - | - |
Channel Mode | Enhancement | - | - |
Packaging | Reel | - | - |
Height | 0.85 mm | - | - |
Length | 3.1 mm | - | - |
Series | TPN5900CNH | - | - |
Transistor Type | 1 N-Channel | - | - |
Width | 3.1 mm | - | - |
Brand | Toshiba | - | - |
Fall Time | 4.5 ns | - | - |
Product Type | MOSFET | - | - |
Rise Time | 5.2 ns | - | - |
Factory Pack Quantity | 5000 | - | - |
Subcategory | MOSFETs | - | - |
Typical Turn Off Delay Time | 19 ns | - | - |
Typical Turn On Delay Time | 14 ns | - | - |