 |  | | |
| PartNumber | TPN2R203NC,L1Q | TPN2R203NC | TPN2R203NC L1Q(M |
| Description | MOSFET X35PBF Power MOSFET Trans VGS10V VDS30V | ||
| Manufacturer | Toshiba | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | TSON-Advance-8 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 30 V | - | - |
| Id Continuous Drain Current | 45 A | - | - |
| Rds On Drain Source Resistance | 1.8 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 2.3 V | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 34 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 42 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Reel | - | - |
| Height | 0.85 mm | - | - |
| Length | 3.1 mm | - | - |
| Series | TPN2R203NC | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Width | 3.1 mm | - | - |
| Brand | Toshiba | - | - |
| Product Type | MOSFET | - | - |
| Factory Pack Quantity | 5000 | - | - |
| Subcategory | MOSFETs | - | - |
| Fabricante | Parte # | Descripción | RFQ |
|---|---|---|---|
Toshiba |
TPN2R203NC,L1Q | MOSFET X35PBF Power MOSFET Trans VGS10V VDS30V | |
| TPN2R203NCL1QCT-ND | Nuevo y original | ||
| TPN2R203NCL1QDKR-ND | Nuevo y original | ||
| TPN2R203NCL1QTR-ND | Nuevo y original | ||
| TPN2R203NC,L1Q | MOSFET X35PBF Power MOSFET Trans VGS10V VDS30V | ||
| TPN2R203NC | Nuevo y original | ||
| TPN2R203NC L1Q(M | Nuevo y original | ||
| TPN2R203NCL1Q | MOSFET POWER MOSFET TRANSISTOR | ||
| TPN2R203NCL1Q(M | Nuevo y original | ||
| TPN2R203NC.L1Q | Trans MOSFET N-CH 30V 100A 8-Pin TSON - Tape and Reel (Alt: TPN2R203NC,L1Q) |