TPHR9003NL,L

TPHR9003NL,L1Q

 
PartNumberTPHR9003NL,L1Q
DescriptionMOSFET X35PBF Power MOSFET Trans VGS4.5VVDS30V
ManufacturerToshiba
Product CategoryMOSFET
RoHSY
TechnologySi
Mounting StyleSMD/SMT
Package / CaseSOP-Advance-8
Number of Channels1 Channel
Transistor PolarityN-Channel
Vds Drain Source Breakdown Voltage30 V
Id Continuous Drain Current60 A
Rds On Drain Source Resistance1.1 mOhms
Vgs th Gate Source Threshold Voltage2.3 V
Vgs Gate Source Voltage20 V
Qg Gate Charge74 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Pd Power Dissipation78 W
ConfigurationSingle
Channel ModeEnhancement
PackagingReel
Height0.95 mm
Length5 mm
SeriesTPHR9003NL
Transistor Type1 N-Channel
Width5 mm
BrandToshiba
Product TypeMOSFET
Factory Pack Quantity5000
SubcategoryMOSFETs
Unit Weight0.030018 oz
Fabricante Parte # Descripción RFQ
Toshiba
Toshiba
TPHR9003NL,L1Q MOSFET X35PBF Power MOSFET Trans VGS4.5VVDS30V
TPHR9003NL,L1Q MOSFET X35PBF Power MOSFET Trans VGS4.5VVDS30V
Top