TPH12

TPH12008NH,L1Q vs TPH12008NH vs TPH12008NH,L1Q(M

 
PartNumberTPH12008NH,L1QTPH12008NHTPH12008NH,L1Q(M
DescriptionMOSFET N-Ch 80V 1490pF 22nC 12.3mOhm 44A 48W
ManufacturerToshiba--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseSOP-Advance-8--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage80 V--
Id Continuous Drain Current44 A--
Rds On Drain Source Resistance10.1 mOhms--
Vgs th Gate Source Threshold Voltage4 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge22 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation48 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingReel--
Height0.95 mm--
Length5 mm--
SeriesTPH12008NH--
Transistor Type1 N-Channel--
Width5 mm--
BrandToshiba--
Fall Time7.4 ns--
Product TypeMOSFET--
Rise Time5 ns--
Factory Pack Quantity5000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time24 ns--
Typical Turn On Delay Time15 ns--
Unit Weight0.030018 oz--
Fabricante Parte # Descripción RFQ
Toshiba
Toshiba
TPH12008NH,L1Q MOSFET N-Ch 80V 1490pF 22nC 12.3mOhm 44A 48W
TPH12008NH Nuevo y original
TPH12008NH,L1Q(M Nuevo y original
TPH12008NHL1Q(M Nuevo y original
TPH12008NHL1QM Nuevo y original
TPH1204-221M Nuevo y original
TPH127-060-24A Nuevo y original
TPH12008NH,L1Q MOSFET N-Ch 80V 1490pF 22nC 12.3mOhm 44A 48W
TPH12008NHL1Q MOSFET N-CH 80V 1490PF 22NC
TPH12008NHL1QCT-ND Nuevo y original
TPH12008NHL1QDKR-ND Nuevo y original
TPH12008NHL1QTR-ND Nuevo y original
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