TMBT3904,L

TMBT3904,LM vs TMBT3904,LM(B vs TMBT3904,LM(T

 
PartNumberTMBT3904,LMTMBT3904,LM(BTMBT3904,LM(T
DescriptionBipolar Transistors - BJT Transistor for Low Freq. Amplification
ManufacturerToshiba--
Product CategoryBipolar Transistors - BJT--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseSOT-23-3--
Transistor PolarityNPN--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max50 V--
Collector Base Voltage VCBO60 V--
Emitter Base Voltage VEBO5 V--
Collector Emitter Saturation Voltage300 mV--
Maximum DC Collector Current150 mA--
Gain Bandwidth Product fT300 MHz--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
SeriesTMBT3904--
PackagingReel--
BrandToshiba--
Pd Power Dissipation1 W--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity3000--
SubcategoryTransistors--
Unit Weight0.000282 oz--
Fabricante Parte # Descripción RFQ
Toshiba
Toshiba
TMBT3904,LM Bipolar Transistors - BJT Transistor for Low Freq. Amplification
TMBT3904,LM Trans GP BJT NPN 50V 0.15A 3-Pin SOT-23 T/R
TMBT3904,LM(B Nuevo y original
TMBT3904,LM(T Nuevo y original
TMBT3904,LM--SW Nuevo y original
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