 |  | | |
| PartNumber | TK6A80E,S4X | TK6A80E | TK6A80E S4X(S |
| Description | MOSFET PLN MOS 800V 1700m (VGS=10V) TO-220SIS | ||
| Manufacturer | Toshiba | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | Through Hole | - | - |
| Package / Case | TO-220FP-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 800 V | - | - |
| Id Continuous Drain Current | 6 A | - | - |
| Rds On Drain Source Resistance | 1.35 Ohms | - | - |
| Vgs th Gate Source Threshold Voltage | 4 V | - | - |
| Vgs Gate Source Voltage | 30 V | - | - |
| Qg Gate Charge | 32 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 45 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Height | 15 mm | - | - |
| Length | 10 mm | - | - |
| Series | TK6A80E | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Width | 4.5 mm | - | - |
| Brand | Toshiba | - | - |
| Fall Time | 15 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 20 ns | - | - |
| Factory Pack Quantity | 50 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 85 ns | - | - |
| Typical Turn On Delay Time | 55 ns | - | - |
| Unit Weight | 0.211644 oz | - | - |
| Fabricante | Parte # | Descripción | RFQ |
|---|---|---|---|
Toshiba |
TK6A80E,S4X | MOSFET PLN MOS 800V 1700m (VGS=10V) TO-220SIS | |
| TK6A80E,S4X | MOSFET PLN MOS 800V 1700m (VGS=10V) TO-220SIS | ||
| TK6A80E,S4X(S) | MOSFETs | ||
| TK6A80E | Nuevo y original | ||
| TK6A80E S4X(S | Nuevo y original | ||
| TK6A80ES4X | MOSFET MOSFET TRAN TO-220SIS | ||
| TK6A80ES4X(S | Nuevo y original | ||
| TK6A80ES4X-ND | Nuevo y original |