PartNumber | TK56A12N1,S4X | TK56A12N1,S4X(S |
Description | MOSFET MOSFET NCh6.2ohm VGS10V10uAVDS120V | |
Manufacturer | Toshiba | - |
Product Category | MOSFET | - |
RoHS | Y | - |
Technology | Si | - |
Mounting Style | Through Hole | - |
Package / Case | TO-220FP-3 | - |
Number of Channels | 1 Channel | - |
Transistor Polarity | N-Channel | - |
Vds Drain Source Breakdown Voltage | 120 V | - |
Id Continuous Drain Current | 56 A | - |
Rds On Drain Source Resistance | 6.2 mOhms | - |
Vgs th Gate Source Threshold Voltage | 4 V | - |
Vgs Gate Source Voltage | 20 V | - |
Qg Gate Charge | 69 nC | - |
Minimum Operating Temperature | - 55 C | - |
Maximum Operating Temperature | + 150 C | - |
Pd Power Dissipation | 45 W | - |
Configuration | Single | - |
Channel Mode | Enhancement | - |
Height | 15 mm | - |
Length | 10 mm | - |
Series | TK56A12N1 | - |
Transistor Type | 1 N-Channel | - |
Width | 4.5 mm | - |
Brand | Toshiba | - |
Product Type | MOSFET | - |
Factory Pack Quantity | 50 | - |
Subcategory | MOSFETs | - |
Unit Weight | 0.211644 oz | - |