TK55S

TK55S10N1,LQ vs TK55S10N1 vs TK55S10N1,LQ(O

 
PartNumberTK55S10N1,LQTK55S10N1TK55S10N1,LQ(O
DescriptionMOSFET UMOSVIII 100V 6.5m max(VGS=10V) DPAKMOSFET POWER N-CH 55A DPAK, RLTrans MOSFET N-CH 100V 55A 3-Pin DPAK (Alt: TK55S10N1,LQ(O)
ManufacturerToshiba--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseTO-252-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage100 V--
Id Continuous Drain Current55 A--
Rds On Drain Source Resistance5.5 mOhms--
Vgs th Gate Source Threshold Voltage4 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge49 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 175 C--
Pd Power Dissipation100 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingReel--
Height2.3 mm--
Length6.5 mm--
SeriesTK55S10N1--
Transistor Type1 N-Channel--
Width5.5 mm--
BrandToshiba--
Fall Time19 ns--
Product TypeMOSFET--
Rise Time11 ns--
Factory Pack Quantity2000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time51 ns--
Typical Turn On Delay Time11 ns--
Unit Weight0.139332 oz--
Fabricante Parte # Descripción RFQ
Toshiba
Toshiba
TK55S10N1,LQ MOSFET UMOSVIII 100V 6.5m max(VGS=10V) DPAK
TK55S10N1,LQ MOSFET UMOSVIII 100V 6.5m max(VGS=10V) DPAK
TK55S10N1 MOSFET POWER N-CH 55A DPAK, RL
TK55S10N1,LQ(O Trans MOSFET N-CH 100V 55A 3-Pin DPAK (Alt: TK55S10N1,LQ(O)
TK55S10N1LQ MOSFET MOSFET TRAN DPAK
TK55S10N1LQ(O Nuevo y original
TK55S10N1LQCT-ND Nuevo y original
TK55S10N1LQDKR-ND Nuevo y original
TK55S10N1LQTR-ND Nuevo y original
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