TK4A60DB

TK4A60DB(STA4,Q,M) vs TK4A60DB vs TK4A60DB(STA4QM)

 
PartNumberTK4A60DB(STA4,Q,M)TK4A60DBTK4A60DB(STA4QM)
DescriptionMOSFET N-Ch MOS 3.7A 600V 25W 540pF 2.2 Ohm
ManufacturerToshiba--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleThrough Hole--
Package / CaseTO-220FP-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage600 V--
Id Continuous Drain Current3.7 A--
Rds On Drain Source Resistance2.2 Ohms--
Pd Power Dissipation25 W--
ConfigurationSingle--
Height15 mm--
Length10 mm--
SeriesTK4A60DB--
Transistor Type1 N-Channel--
Width4.5 mm--
BrandToshiba--
Product TypeMOSFET--
Factory Pack Quantity50--
SubcategoryMOSFETs--
Unit Weight0.211644 oz--
Fabricante Parte # Descripción RFQ
Toshiba
Toshiba
TK4A60DB(STA4,Q,M) MOSFET N-Ch MOS 3.7A 600V 25W 540pF 2.2 Ohm
TK4A60DB(STA4,Q,M) MOSFET N-Ch MOS 3.7A 600V 25W 540pF 2.2 Ohm
TK4A60DB Nuevo y original
TK4A60DB(STA4QM) Nuevo y original
TK4A60DB,K4A60DB Nuevo y original
TK4A60DBTA4 Nuevo y original
TK4A60DB(STA4QM)-ND Nuevo y original
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