TK3R1P

TK3R1P04PL,RQ vs TK3R1P04PL vs TK3R1P04PLRQ

 
PartNumberTK3R1P04PL,RQTK3R1P04PLTK3R1P04PLRQ
DescriptionMOSFET N-Ch 40V 4670pF 60nC 130A 87W
ManufacturerToshiba--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseTO-252-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage40 V--
Id Continuous Drain Current130 A--
Rds On Drain Source Resistance2.5 mOhms--
Vgs th Gate Source Threshold Voltage1.4 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge60 nC--
Maximum Operating Temperature+ 175 C--
Pd Power Dissipation87 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingReel--
SeriesTK3R1P04PL--
Transistor Type1 N-Channel--
BrandToshiba--
Fall Time19 ns--
Product TypeMOSFET--
Rise Time8 ns--
Factory Pack Quantity2500--
SubcategoryMOSFETs--
Typical Turn Off Delay Time72 ns--
Typical Turn On Delay Time20 ns--
Unit Weight0.007055 oz--
Fabricante Parte # Descripción RFQ
Toshiba
Toshiba
TK3R1P04PL,RQ MOSFET N-Ch 40V 4670pF 60nC 130A 87W
TK3R1P04PL Nuevo y original
TK3R1P04PLRQ Nuevo y original
TK3R1P04PLRQCT-ND Nuevo y original
TK3R1P04PLRQDKR-ND Nuevo y original
TK3R1P04PLRQTR-ND Nuevo y original
Top