TK28N

TK28N65W,S1F vs TK28N65W vs TK28N65W-S1F

 
PartNumberTK28N65W,S1FTK28N65WTK28N65W-S1F
DescriptionMOSFET Power MOSFET N-Channel
ManufacturerToshiba--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleThrough Hole--
Package / CaseTO-247-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage650 V--
Id Continuous Drain Current27.6 A--
Rds On Drain Source Resistance94 mOhms--
Vgs th Gate Source Threshold Voltage2.5 V--
Vgs Gate Source Voltage30 V--
Qg Gate Charge75 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation230 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingTube--
Height20.95 mm--
Length15.94 mm--
SeriesTK28N65W--
Width5.02 mm--
BrandToshiba--
Fall Time7 ns--
Product TypeMOSFET--
Rise Time25 ns--
Factory Pack Quantity30--
SubcategoryMOSFETs--
Typical Turn Off Delay Time130 ns--
Typical Turn On Delay Time60 ns--
Unit Weight1.340411 oz--
Fabricante Parte # Descripción RFQ
Toshiba
Toshiba
TK28N65W,S1F MOSFET Power MOSFET N-Channel
TK28N65W Nuevo y original
TK28N65W-S1F Nuevo y original
TK28N65W5 Nuevo y original
TK28N65W5 TK28N65W Nuevo y original
TK28N65W5,S1F(S Nuevo y original
TK28N65WS1F Nuevo y original
TK28N65WS1F-ND Nuevo y original
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