PartNumber | TK28N65W,S1F | TK28N65W | TK28N65W-S1F |
Description | MOSFET Power MOSFET N-Channel | ||
Manufacturer | Toshiba | - | - |
Product Category | MOSFET | - | - |
RoHS | Y | - | - |
Technology | Si | - | - |
Mounting Style | Through Hole | - | - |
Package / Case | TO-247-3 | - | - |
Number of Channels | 1 Channel | - | - |
Transistor Polarity | N-Channel | - | - |
Vds Drain Source Breakdown Voltage | 650 V | - | - |
Id Continuous Drain Current | 27.6 A | - | - |
Rds On Drain Source Resistance | 94 mOhms | - | - |
Vgs th Gate Source Threshold Voltage | 2.5 V | - | - |
Vgs Gate Source Voltage | 30 V | - | - |
Qg Gate Charge | 75 nC | - | - |
Minimum Operating Temperature | - 55 C | - | - |
Maximum Operating Temperature | + 150 C | - | - |
Pd Power Dissipation | 230 W | - | - |
Configuration | Single | - | - |
Channel Mode | Enhancement | - | - |
Packaging | Tube | - | - |
Height | 20.95 mm | - | - |
Length | 15.94 mm | - | - |
Series | TK28N65W | - | - |
Width | 5.02 mm | - | - |
Brand | Toshiba | - | - |
Fall Time | 7 ns | - | - |
Product Type | MOSFET | - | - |
Rise Time | 25 ns | - | - |
Factory Pack Quantity | 30 | - | - |
Subcategory | MOSFETs | - | - |
Typical Turn Off Delay Time | 130 ns | - | - |
Typical Turn On Delay Time | 60 ns | - | - |
Unit Weight | 1.340411 oz | - | - |