TK16G

TK16G60W,RVQ vs TK16G60W vs TK16G60W,RVQ(S

 
PartNumberTK16G60W,RVQTK16G60WTK16G60W,RVQ(S
DescriptionMOSFET DTMOSIV 600V 190mOhm 15.8A 130W 1350pFMOSFET POWER N-CH 15.8A D2PAK-3, RLTrans MOSFET N-CH 600V 15.8A 3-Pin(2+Tab) D2PAK
ManufacturerToshiba--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleThrough Hole--
Package / CaseTO-262-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage600 V--
Id Continuous Drain Current15.8 A--
Rds On Drain Source Resistance190 mOhms--
Vgs th Gate Source Threshold Voltage3.7 V--
Vgs Gate Source Voltage30 V--
Qg Gate Charge38 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation130 W--
ConfigurationSingle--
TradenameDTMOSIV--
PackagingReel--
Height10.4 mm--
Length10 mm--
SeriesTK16G60W--
Transistor Type1 N-Channel--
Width4.5 mm--
BrandToshiba--
Fall Time5 ns--
Product TypeMOSFET--
Rise Time25 ns--
Factory Pack Quantity1000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time100 ns--
Typical Turn On Delay Time50 ns--
Unit Weight0.139332 oz--
Fabricante Parte # Descripción RFQ
Toshiba
Toshiba
TK16G60W,RVQ MOSFET DTMOSIV 600V 190mOhm 15.8A 130W 1350pF
TK16G60W,RVQ Darlington Transistors MOSFET DTMOSIV 600V 190mOhm 15.8A 130W 1350pF
TK16G60WRVQ Trans MOSFET N 600V 15.8A 3-Pin D2PAK Emboss T/R - Tape and Reel (Alt: TK16G60W,RVQ)
TK16G60W MOSFET POWER N-CH 15.8A D2PAK-3, RL
TK16G60W,RVQ(S Trans MOSFET N-CH 600V 15.8A 3-Pin(2+Tab) D2PAK
TK16G60W5 Nuevo y original
TK16G60WRVQCT-ND Nuevo y original
TK16G60WRVQDKR-ND Nuevo y original
TK16G60WRVQTR-ND Nuevo y original
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