TK13A50

TK13A50D(STA4,Q,M) vs TK13A50D vs TK13A50D(Q)

 
PartNumberTK13A50D(STA4,Q,M)TK13A50DTK13A50D(Q)
DescriptionMOSFET N-Ch MOS 13A 500V 45W 1800pF 0.40Trans MOSFET N-CH Si 500V 13A 3-Pin(3+Tab) TO-220SIS
ManufacturerToshiba--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleThrough Hole--
Package / CaseTO-220FP-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage500 V--
Id Continuous Drain Current13 A--
Rds On Drain Source Resistance400 mOhms--
Pd Power Dissipation45 W--
ConfigurationSingle--
Height15 mm--
Length10 mm--
SeriesTK13A50D--
Transistor Type1 N-Channel--
Width4.5 mm--
BrandToshiba--
Product TypeMOSFET--
Factory Pack Quantity50--
SubcategoryMOSFETs--
Unit Weight0.211644 oz--
Fabricante Parte # Descripción RFQ
Toshiba
Toshiba
TK13A50DA(STA4,Q,M MOSFET N-Ch MOS 13A 500V 45W 1550pF 0.47
TK13A50D(STA4,Q,M) MOSFET N-Ch MOS 13A 500V 45W 1800pF 0.40
TK13A50DA(STA4,Q,M IGBT Transistors MOSFET N-Ch MOS 13A 500V 45W 1550pF 0.47
TK13A50D(STA4,Q,M) MOSFET N-Ch MOS 13A 500V 45W 1800pF 0.40
TK13A50D Nuevo y original
TK13A50D(STA4,X,S) Nuevo y original
TK13A50D(STA4Q) Nuevo y original
TK13A50DA Nuevo y original
TK13A50DA TK13A50D Nuevo y original
TK13A50DA(STA4QM Nuevo y original
TK13A50DQ Power Field-Effect Transistor, 12.5A I(D), 500V, 0.47ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
TK13A50D(STA4QM) MOSFET N-CH 500V TO220SIS
TK13A50D(Q) Trans MOSFET N-CH Si 500V 13A 3-Pin(3+Tab) TO-220SIS
TK13A50D(STA4QM)-ND Nuevo y original
TK13A50DA(STA4QM-ND Nuevo y original
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