 |  | | |
| PartNumber | TK10J80E,S1E | TK10J80E,S1E(S | TK10J80ES1E-ND |
| Description | MOSFET PLN MOS 800V 1000m (VGS=10V) TO-3PN | Trans MOSFET N-CH Si 800V 10A 3-Pin(3+Tab) TO-3PN | |
| Manufacturer | Toshiba | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | Through Hole | - | - |
| Package / Case | TO-3PN-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 800 V | - | - |
| Id Continuous Drain Current | 10 A | - | - |
| Rds On Drain Source Resistance | 700 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 4 V | - | - |
| Vgs Gate Source Voltage | 30 V | - | - |
| Qg Gate Charge | 46 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 250 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Height | 20 mm | - | - |
| Length | 15.5 mm | - | - |
| Series | TK10J80E | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Width | 4.5 mm | - | - |
| Brand | Toshiba | - | - |
| Fall Time | 35 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 40 ns | - | - |
| Factory Pack Quantity | 25 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 140 ns | - | - |
| Typical Turn On Delay Time | 80 ns | - | - |
| Unit Weight | 0.245577 oz | - | - |
| Fabricante | Parte # | Descripción | RFQ |
|---|---|---|---|
Toshiba |
TK10J80E,S1E | MOSFET PLN MOS 800V 1000m (VGS=10V) TO-3PN | |
| TK10J80E,S1E | MOSFET PLN MOS 800V 1000m (VGS=10V) TO-3PN | ||
| TK10J80E,S1E(S | Trans MOSFET N-CH Si 800V 10A 3-Pin(3+Tab) TO-3PN | ||
| TK10J80ES1E-ND | Nuevo y original |