| PartNumber | TK10A80E,S4X | TK10A60W,S4VX | TK10A60W5,S5VX |
| Description | MOSFET PLN MOS 800V 1000m (VGS=10V) TO-220SIS | MOSFET N-Ch 600V 9.7A 30W DTMOSIV 700pF 20nC | MOSFET Power MOSFET N-Channel |
| Manufacturer | Toshiba | Toshiba | Toshiba |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | Through Hole | Through Hole | Through Hole |
| Package / Case | TO-220FP-3 | TO-220FP-3 | TO-220FP-3 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 800 V | 600 V | 600 V |
| Id Continuous Drain Current | 10 A | 9.7 A | 9.7 A |
| Rds On Drain Source Resistance | 700 mOhms | 327 mOhms | 350 mOhms |
| Vgs th Gate Source Threshold Voltage | 4 V | 3.7 V | 3 V |
| Vgs Gate Source Voltage | 30 V | 30 V | 30 V |
| Qg Gate Charge | 46 nC | 20 nC | 25 nC |
| Minimum Operating Temperature | - 55 C | - | - 55 C |
| Maximum Operating Temperature | + 150 C | - | + 150 C |
| Pd Power Dissipation | 50 W | 30 W | 30 W |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Tradename | DTMOSIV | DTMOSIV | DTMOSIV |
| Height | 15 mm | 15 mm | 15 mm |
| Length | 10 mm | 10 mm | 10 mm |
| Series | TK10A80E | TK10A60W | TK10A60W |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Width | 4.5 mm | 4.5 mm | 4.5 mm |
| Brand | Toshiba | Toshiba | Toshiba |
| Fall Time | 35 ns | 5.5 ns | 5.5 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 40 ns | 22 ns | 40 ns |
| Factory Pack Quantity | 50 | 50 | 50 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 140 ns | 75 ns | 85 ns |
| Typical Turn On Delay Time | 80 ns | 45 ns | 75 ns |
| Unit Weight | 0.211644 oz | 0.211644 oz | 0.211644 oz |
| Packaging | - | - | Tube |